Atmospheric pressure growth of Eu-doped GaN by organometallic vapor phase epitaxy

2010 ◽  
Vol 208 (2) ◽  
pp. 445-448 ◽  
Author(s):  
Naoki Furukawa ◽  
Atsushi Nishikawa ◽  
Takashi Kawasaki ◽  
Yoshikazu Terai ◽  
Yasufumi Fujiwara
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