Modeling and characterization of piezoelectric beams based on an aluminum nitride thin-film layer

2015 ◽  
Vol 213 (1) ◽  
pp. 114-121 ◽  
Author(s):  
Etienne Herth ◽  
Emmanuelle Algré ◽  
Jean-Yves Rauch ◽  
Jean-Claude Gerbedoen ◽  
Nicolas Defrance ◽  
...  
Keyword(s):  
Thin Film ◽  
Aluminum Nitride ◽  
Thin Film Layer ◽  
Film Layer

Measurements of Residual Stress in the Layers of Thin Film Micro-Gas Sensors

2000 ◽  
Vol 657 ◽  
Author(s):  
Youngman Kim ◽  
Sung-Ho Choo
Keyword(s):  
Thin Film ◽  
Mechanical Properties ◽  
Residual Stress ◽  
Gas Sensor ◽  
Gas Sensors ◽  
Micro Gas Sensor ◽  
Thin Film Layer ◽  
Film Layer ◽  
The Difference ◽  
Stress States

ABSTRACTThe mechanical properties of thin film materials are known to be different from those of bulk materials, which are generally overlooked in practice. The difference in mechanical properties can be misleading in the estimation of residual stress states in micro-gas sensors with multi-layer structures during manufacturing and in service.In this study the residual stress of each film layer in a micro-gas sensor was measured according to the five difference sets of film stacking structure used for the sensor. The Pt thin film layer was found to have the highest tensile residual stress, which may affect the reliability of the micro-gas sensor. For the Pt layer the changes in residual stress were measured as a function of processing variables and thermal cycling.

Electrical and Optical Properties of ZnO:Ag Thin-Films Depend on Lamination Formation by DC Magnetron Sputtering

2015 ◽  
Vol 1110 ◽  
pp. 211-217
Author(s):  
Jin Woo Lee ◽  
Yun Hae Kim ◽  
Chang Wook Park
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Stacking Sequence ◽  
Flat Panel Displays ◽  
Oxide Systems ◽  
Thin Film Layer ◽  
Tin Oxides ◽  
Impurity Doped ◽  
Indium Oxides ◽  
Film Layer

Transparent conductive oxides such as Impurity doped indium oxides, tin oxides, zinc oxide systems are widely used in the field of optoelectronics such as Photo voltaic solar cells, Flat panel displays. Recently in case of the ZnO / Ag Multilayer thin films, doping Ag films on the ZnO layer and ZnO deposited on top of it a way that has been used. However, if thin film applied to the semiconductor, because of lamination of various forms, characteristics of stacking sequence and thin film layer is a need for research. In this study, using DC magnetron sputteirng how the stacking sequence of the film and the transparent operation of various process variables, the possibility of the application to electronic devices was confirmed.

Porous Silicon Films for Thin Film Layer Transfer Applications and Wafer Bonding

2019 ◽  
Vol 33 (4) ◽  
pp. 195-206 ◽  
Author(s):  
Monali Joshi ◽  
Song Jun Hu ◽  
Mark S. Goorsky
Keyword(s):  
Thin Film ◽  
Porous Silicon ◽  
Wafer Bonding ◽  
Silicon Films ◽  
Layer Transfer ◽  
Thin Film Layer ◽  
Film Layer

High throughput two-step ultrasonic spray deposited CH3NH3PbI3 thin film layer for solar cell application

2018 ◽  
Vol 390 ◽  
pp. 270-277 ◽  
Author(s):  
Ding-Hung Lan ◽  
Shao-Huan Hong ◽  
Li-Hui Chou ◽  
Xiao-Feng Wang ◽  
Cheng-Liang Liu
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
High Throughput ◽  
Solar Cell Application ◽  
Ultrasonic Spray ◽  
Thin Film Layer ◽  
Film Layer

Structure and Electrical Properties of ZnO Nanoparticles Blend with POT-DBSA

2020 ◽  
Vol 1002 ◽  
pp. 114-122
Author(s):  
Dalal K. Thbayh ◽  
Rawnaq A. Talib ◽  
Dalal N. Ahilfi ◽  
Tahseen A. Alaridhee ◽  
Kareema M. Ziadan
Keyword(s):  
Zno Nanoparticles ◽  
In Situ Polymerization ◽  
Composite Films ◽  
Dodecylbenzene Sulfonate ◽  
Thin Film Layer ◽  
Film Layer ◽  
Layer Contact ◽  
Diffraction Patterns

In this study, we report on a successful preparation nanocomposites poly (o-toluidine) (POT) doping with dodecylbenzene sulfonate acid (DBSA)/ ZnO by in-situ polymerization of (o-toluidine) monomer using ZnO nanoparticles (the weight ratios OT/ZnO: 1/5%, 1/10%, 1/15%). The composite films have been prepared by using the casting method on different substrate depending on the type of measurement. The surface morphology properties of the prepared samples were studied by the field emission scanning electron microscopy (FESEM). The results of FESEM indicate that ZnO nanoparticles were successfully embedded in the POT via chemical interactions between ZnO and (O-toluidine) monomer and the EDX spectrum showed the presence of element Zn in POT-DBSA/ZnO composites. The crystal structure was measured by x-ray directional and its pattern revealed the presence of ZnO in dopant polymer, in the diffraction patterns of POT-DBSA. The intensity of the peaks was increased as the amount of ZnO nanoparticles increased in POT-DBSA. The typical rectifying behaviour indicated that the formation of a diode observes by the I–V characterization of POT-DBSA/ZnO composites at thin film layer with top Al thin layer contact.

Electro-Optical Characteristics of Vertical Alignment Cell by Ion-Beam Exposure on the SiC Thin Film Layer

2008 ◽  
Vol 480 (1) ◽  
pp. 10-18 ◽  
Author(s):  
Jeoung-Yeon Hwang ◽  
Sung-Ho Choi ◽  
Sang-Hoon Kim ◽  
Jin Jang ◽  
Dae-Shik Seo
Keyword(s):  
Thin Film ◽  
Ion Beam ◽  
Optical Characteristics ◽  
Vertical Alignment ◽  
Thin Film Layer ◽  
Film Layer
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