Electrical and Optical Properties of ZnO:Ag Thin-Films Depend on Lamination Formation by DC Magnetron Sputtering

2015 ◽  
Vol 1110 ◽  
pp. 211-217
Author(s):  
Jin Woo Lee ◽  
Yun Hae Kim ◽  
Chang Wook Park
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Stacking Sequence ◽  
Flat Panel Displays ◽  
Oxide Systems ◽  
Thin Film Layer ◽  
Tin Oxides ◽  
Impurity Doped ◽  
Indium Oxides ◽  
Film Layer

Transparent conductive oxides such as Impurity doped indium oxides, tin oxides, zinc oxide systems are widely used in the field of optoelectronics such as Photo voltaic solar cells, Flat panel displays. Recently in case of the ZnO / Ag Multilayer thin films, doping Ag films on the ZnO layer and ZnO deposited on top of it a way that has been used. However, if thin film applied to the semiconductor, because of lamination of various forms, characteristics of stacking sequence and thin film layer is a need for research. In this study, using DC magnetron sputteirng how the stacking sequence of the film and the transparent operation of various process variables, the possibility of the application to electronic devices was confirmed.

Ferroelectricity of Lanthanum-Modified Lead-Titanate Thin Films Deposited on Nickel Alloy Electrodes

1991 ◽  
Vol 243 ◽  
Author(s):  
Toshio Ogawa ◽  
Satoshi Shindou ◽  
Atsuo Senda ◽  
Tohru Kasanami
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Nickel Alloy ◽  
Lead Titanate ◽  
Crystal Orientation ◽  
Rf Magnetron Sputtering ◽  
Alloy Electrode ◽  
Thin Film Layer ◽  
Film Layer

AbstractLanthanum-modified lead-titanate (Pbo.85Lao.1Ti03) thin films were fabricated by rf magnetron sputtering on various kinds of substrates such as single-crystal MgO (100), r-plane sapphire and SI (100) with an MgO thin film layer. All the films were able to be evaluated using nickel alloy electrodes which possess low reactivity with PbO, excellent heat-resistance and oxidation-resistance. The quality of these films was affected by the kind of substrate and crystal orientation of nickel alloy electrode used. Furthermore, by controlling the crystal orientation of the alloy electrode, films on Si (100) with an MgO (100) layer showed good ferroelectricity.

scholarly journals Potentiostat Electro-Deposited Cuprous Oxide and Cupric Oxide Thin Films for Photovoltaic Use

2019 ◽  
Vol 16 (2) ◽  
pp. 6624-6633
Author(s):  
T. P. Plateau ◽  
M. T. Islam ◽  
N. Islam``
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Cuprous Oxide ◽  
Cupric Oxide ◽  
Potential Difference ◽  
Solution Temperature ◽  
Good Efficiency ◽  
Thin Film Layer ◽  
Film Layer ◽  
Cu2o Thin Film

To withstand the rising demand for energy while fuel and chemical energy are becoming rare, the development in the production of solar energy has become a necessity. There is a variety of solar cells; among them, thin-film photovoltaics is more popular because of low-cost production and good-efficiency. Nowadays, copper oxide has become popular to make thin film layers like CZTS, CIGS, etc. Unfortunately, the efficiency of these thin films is less than 20%. In order to obtain better efficacy, an investigation of the layers of thin films is needed. This research discussed the properties of copper and its oxides. In case of making the thin film layers, potentiostat electro-deposition was the chosen method where bath composition of CuSO4.5H2O solution, temperature, time, potential difference were the variable parameters. The best-deposited layers were obtained in 0.2 M concentration, 40 minutes, -0.5 V potential difference and 65oC. Hence, physical properties like thickness and hardness, and characterisation properties like X-ray diffractometry (XRD), scanning electron microscopy (SEM), UV-Vis spectrometry are observed to compare cupric oxide (CuO) and cuprous oxide (Cu2O) thin films. CuO thin film shows better stability and rigidity than the Cu2O thin film. But the thin film layer of cuprous oxide illustrates good homogeneity and nodular form. From the test mentioned above data, band gap has been measured for each deposited film, and the CuO thin film layer is raked out having a better band energy gap than the Cu2O thin film layer.

Measurements of Residual Stress in the Layers of Thin Film Micro-Gas Sensors

2000 ◽  
Vol 657 ◽  
Author(s):  
Youngman Kim ◽  
Sung-Ho Choo
Keyword(s):  
Thin Film ◽  
Mechanical Properties ◽  
Residual Stress ◽  
Gas Sensor ◽  
Gas Sensors ◽  
Micro Gas Sensor ◽  
Thin Film Layer ◽  
Film Layer ◽  
The Difference ◽  
Stress States

ABSTRACTThe mechanical properties of thin film materials are known to be different from those of bulk materials, which are generally overlooked in practice. The difference in mechanical properties can be misleading in the estimation of residual stress states in micro-gas sensors with multi-layer structures during manufacturing and in service.In this study the residual stress of each film layer in a micro-gas sensor was measured according to the five difference sets of film stacking structure used for the sensor. The Pt thin film layer was found to have the highest tensile residual stress, which may affect the reliability of the micro-gas sensor. For the Pt layer the changes in residual stress were measured as a function of processing variables and thermal cycling.

Porous Silicon Films for Thin Film Layer Transfer Applications and Wafer Bonding

2019 ◽  
Vol 33 (4) ◽  
pp. 195-206 ◽  
Author(s):  
Monali Joshi ◽  
Song Jun Hu ◽  
Mark S. Goorsky
Keyword(s):  
Thin Film ◽  
Porous Silicon ◽  
Wafer Bonding ◽  
Silicon Films ◽  
Layer Transfer ◽  
Thin Film Layer ◽  
Film Layer

High throughput two-step ultrasonic spray deposited CH3NH3PbI3 thin film layer for solar cell application

2018 ◽  
Vol 390 ◽  
pp. 270-277 ◽  
Author(s):  
Ding-Hung Lan ◽  
Shao-Huan Hong ◽  
Li-Hui Chou ◽  
Xiao-Feng Wang ◽  
Cheng-Liang Liu
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
High Throughput ◽  
Solar Cell Application ◽  
Ultrasonic Spray ◽  
Thin Film Layer ◽  
Film Layer
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