The Effect of AlN Buffer Layer on AlGaN/GaN/AlN Double‐Heterostructure High‐Electron‐Mobility Transistor

2019 ◽  
Vol 217 (7) ◽  
pp. 1900694
Author(s):  
Uiho Choi ◽  
Donghyeop Jung ◽  
Kyeongjae Lee ◽  
Taemyung Kwak ◽  
Taehoon Jang ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Double Heterostructure ◽  
Aln Buffer

scholarly journals Carbon doped GaN buffer layer using propane for high electron mobility transistor applications: Growth and device results

2015 ◽  
Vol 107 (26) ◽  
pp. 262105 ◽  
Author(s):  
X. Li ◽  
J. Bergsten ◽  
D. Nilsson ◽  
Ö. Danielsson ◽  
H. Pedersen ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Carbon Doped ◽  
Gan Buffer Layer

New Model of Fe Diffusion in Highly Resistive Fe-Doped Buffer Layer for GaN High-Electron-Mobility Transistor

2013 ◽  
Vol 52 (8S) ◽  
pp. 08JB17 ◽  
Author(s):  
Tetsuro Ishiguro ◽  
Atsushi Yamada ◽  
Junji Kotani ◽  
Norikazu Nakamura ◽  
Toshihide Kikkawa ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
New Model

1.8-kV circular AlGaN/GaN/AlGaN double-heterostructure high electron mobility transistor

2019 ◽  
Vol 28 (2) ◽  
pp. 027301
Author(s):  
Sheng-Lei Zhao ◽  
Zhi-Zhe Wang ◽  
Da-Zheng Chen ◽  
Mao-Jun Wang ◽  
Yang Dai ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Double Heterostructure

2DEG Transport Properties in AlGaN/GaN Double Heterostructure HEMT with High In Composition InGaN Channel

2013 ◽  
Vol 805-806 ◽  
pp. 1027-1030 ◽  
Author(s):  
Da Qing Peng ◽  
Xun Dong ◽  
Zhong Hui Li ◽  
Dong Guo Zhang ◽  
Liang Li ◽  
...  
Keyword(s):  
Phase Separation ◽  
Transport Properties ◽  
Sheet Resistance ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Double Heterostructure ◽  
2Deg Density

AlGaN/InGaN/GaN double heterostructure high electron mobility transistor (HEMT) with In composition from 0.08 to 0.26 were grown by MOCVD. 2DEG density and mobility of different channel In composition were investigated. When In composition below 0.19, 2DEG density increased nearly linearly with In composition, and the mobility decreased a bit. While In composition over 0.19, phase separation became more serious, 2DEG density nearly not changed, and the mobility dropped sharply. A high 2DEG mobility of 1163 cm2/V·s with low sheet resistance of 342Ω/ was obtained with In composition 0.19.

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