Effects of Low-Oxygen-Content Metalorganic Precursors on AlInAs and High Electron Mobility Transistor Structures with the Thick AlInAs Buffer Layer

Japanese Journal of Applied Physics ◽

10.1143/jjap.42.l993 ◽

2003 ◽

Vol 42 (Part 2, No. 8B) ◽

pp. L993-L995 ◽

Author(s):

Tsuyoshi Tanaka ◽

Kohichi Tokudome ◽

Yasuyuki Miyamoto

Keyword(s):

Buffer Layer ◽

Oxygen Content ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility

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The Effect of AlN Buffer Layer on AlGaN/GaN/AlN Double‐Heterostructure High‐Electron‐Mobility Transistor

physica status solidi (a) ◽

10.1002/pssa.201900694 ◽

2019 ◽

Vol 217 (7) ◽

pp. 1900694

Author(s):

Uiho Choi ◽

Donghyeop Jung ◽

Kyeongjae Lee ◽

Taemyung Kwak ◽

Taehoon Jang ◽

...

Keyword(s):

Buffer Layer ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility ◽

Double Heterostructure ◽

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Carbon doped GaN buffer layer using propane for high electron mobility transistor applications: Growth and device results

Applied Physics Letters ◽

10.1063/1.4937575 ◽

2015 ◽

Vol 107 (26) ◽

pp. 262105 ◽

Author(s):

X. Li ◽

J. Bergsten ◽

D. Nilsson ◽

Ö. Danielsson ◽

H. Pedersen ◽

...

Keyword(s):

Buffer Layer ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility ◽

Carbon Doped ◽

Gan Buffer Layer

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New Model of Fe Diffusion in Highly Resistive Fe-Doped Buffer Layer for GaN High-Electron-Mobility Transistor

Japanese Journal of Applied Physics ◽

10.7567/jjap.52.08jb17 ◽

2013 ◽

Vol 52 (8S) ◽

pp. 08JB17 ◽

Author(s):

Tetsuro Ishiguro ◽

Atsushi Yamada ◽

Junji Kotani ◽

Norikazu Nakamura ◽

Toshihide Kikkawa ◽

...

Keyword(s):

Buffer Layer ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility ◽

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Reduction of buffer leakage current in AlGaN/GaN high-electron-mobility-transistor structure on Si substrate by reducing the dislocation density in AlN buffer layer

2007 European Microwave Integrated Circuit Conference ◽

10.1109/emicc.2007.4412655 ◽

2007 ◽

Author(s):

Yasuhiro Oda ◽

Noriyuki Watanabe ◽

Masanobu Hiroki ◽

Takuma Yagi ◽

Takashi Kobayashi

Keyword(s):

Dislocation Density ◽

Buffer Layer ◽

Leakage Current ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

Si Substrate ◽

Transistor Structure ◽

High Electron Mobility ◽

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Molecular beam epitaxy growth of indium-rich structures towards high channel conductivity for a high electron mobility transistor using a linearly graded buffer layer

Journal of Crystal Growth ◽

10.1016/s0022-0248(96)00412-5 ◽

1996 ◽

Vol 169 (3) ◽

pp. 435-442 ◽

Author(s):

Sang-Ki Hong ◽

Hae-Gwon Lee ◽

Jae-Jin Lee ◽

Sang-Gi Kim ◽

Kwang-Eui Pyun ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Buffer Layer ◽

Electron Mobility ◽

Molecular Beam ◽

High Electron Mobility Transistor ◽

Molecular Beam Epitaxy Growth ◽

High Electron ◽

High Electron Mobility ◽

Channel Conductivity

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Effect of AlxGa1−xN buffer layer on the structural and electrical properties of AlGaN/GaN/AlxGa1−xN double heterojunction high electron mobility transistor structures

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.5129031 ◽

2020 ◽

Vol 38 (2) ◽

pp. 022204

Author(s):

Yongjun Nam ◽

Uiho Choi ◽

Kyeongjae Lee ◽

Taehoon Jang ◽

Donghyeop Jung ◽

...

Keyword(s):

Electrical Properties ◽

Buffer Layer ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility ◽

Structural And Electrical Properties ◽

Double Heterojunction

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Molecular beam epitaxy growth of InP-based lattice-matched high electron mobility transistor structures having a modified quantum-well profile due to AlxGayIn1 − x − yAs(x + y = 0.47−8) buffer layer

Journal of Crystal Growth ◽

10.1016/s0022-0248(96)00897-4 ◽

1997 ◽

Vol 177 (1-2) ◽

pp. 28-32

Author(s):

H.G. Lee ◽

S.K. Hong ◽

S.G. Kim ◽

K.S. Lee ◽

H.M. Kim ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Buffer Layer ◽

Electron Mobility ◽

Molecular Beam ◽

High Electron Mobility Transistor ◽

Molecular Beam Epitaxy Growth ◽

High Electron ◽

High Electron Mobility ◽

Lattice Matched

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High breakdown voltage lateral AlGaN/GaN high electron mobility transistor with p-GaN islands buried buffer layer for power applications

Acta Physica Sinica ◽

10.7498/aps.66.247302 ◽

2017 ◽

Vol 66 (24) ◽

pp. 247302

Author(s):

Zhang Li ◽

Lin Zhi-Yu ◽

Luo Jun ◽

Wang Shu-Long ◽

Zhang Jin-Cheng ◽

...

Keyword(s):

Buffer Layer ◽

Breakdown Voltage ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility ◽

High Breakdown Voltage

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Relationship between Al content of AlGaN buffer layer on top of initial AlN nucleation layer on Si and vertical leakage current of AlGaN/GaN high-electron-mobility transistor structures

2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS) ◽

10.1109/iciprm.2016.7528671 ◽

2016 ◽

Author(s):

Yuya Yamaoka ◽

Kazuhiro Ito ◽

Akinori Ubukata ◽

Yoshiki Yano ◽

Toshiya Tabuchi ◽

...

Keyword(s):

Buffer Layer ◽

Leakage Current ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

Nucleation Layer ◽

High Electron Mobility ◽

Vertical Leakage ◽

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Warp Reduction of High-Electron-Mobility-Transistor on Si Wafer by In-Doped Selectively Doped Heterostructure and Strained-Layer Superlattice Buffer Layer

Japanese Journal of Applied Physics ◽

10.1143/jjap.33.4499 ◽

1994 ◽

Vol 33 (Part 1, No. 8) ◽

pp. 4499-4505 ◽

Author(s):

Tatsuya Ohori ◽

Haruyoshi Suehiro ◽

Kazumi Kasai ◽

Junji Komeno

Keyword(s):

Buffer Layer ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility ◽

Strained Layer ◽

Strained Layer Superlattice ◽

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