Effect of AlxGa1−xN buffer layer on the structural and electrical properties of AlGaN/GaN/AlxGa1−xN double heterojunction high electron mobility transistor structures

2020 ◽  
Vol 38 (2) ◽  
pp. 022204
Author(s):  
Yongjun Nam ◽  
Uiho Choi ◽  
Kyeongjae Lee ◽  
Taehoon Jang ◽  
Donghyeop Jung ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Buffer Layer ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Structural And Electrical Properties ◽  
Double Heterojunction

The Effect of AlN Buffer Layer on AlGaN/GaN/AlN Double‐Heterostructure High‐Electron‐Mobility Transistor

2019 ◽  
Vol 217 (7) ◽  
pp. 1900694
Author(s):  
Uiho Choi ◽  
Donghyeop Jung ◽  
Kyeongjae Lee ◽  
Taemyung Kwak ◽  
Taehoon Jang ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Double Heterostructure ◽  
Aln Buffer

scholarly journals Carbon doped GaN buffer layer using propane for high electron mobility transistor applications: Growth and device results

2015 ◽  
Vol 107 (26) ◽  
pp. 262105 ◽  
Author(s):  
X. Li ◽  
J. Bergsten ◽  
D. Nilsson ◽  
Ö. Danielsson ◽  
H. Pedersen ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Carbon Doped ◽  
Gan Buffer Layer

New Model of Fe Diffusion in Highly Resistive Fe-Doped Buffer Layer for GaN High-Electron-Mobility Transistor

2013 ◽  
Vol 52 (8S) ◽  
pp. 08JB17 ◽  
Author(s):  
Tetsuro Ishiguro ◽  
Atsushi Yamada ◽  
Junji Kotani ◽  
Norikazu Nakamura ◽  
Toshihide Kikkawa ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
New Model
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