High Crystallinity and Highly Relaxed Al
0.60
Ga
0.40
N Films Using Growth Mode Control Fabricated on a Sputtered AlN Template with High‐Temperature Annealing
2020 ◽
Vol 217
(14)
◽
pp. 1900868
◽
Keyword(s):
Defect reduction in oxygen implanted silicon-on-insulator material during high-temperature annealing
1989 ◽
Vol 47
◽
pp. 604-605
2003 ◽
Vol 386
◽
pp. 358-362
◽
1970 ◽
Vol 32
(6)
◽
pp. 1791-1797
Keyword(s):