Fabrication of Detonation Nanodiamonds Containing Silicon‐Vacancy Color Centers by High Temperature Annealing

The influence of different cooling rates on deep levels in 4H-SiC after high temperature annealing has been investigated. The samples were heated from room temperature to 2300°C, followed by a 20 minutes anneal at this temperature. Different subsequent cooling sequences down to 1100°C were used. The samples have been investigated using photoluminescence (PL) and IV characteristics. The PL intensities of the silicon vacancy (VSi) and UD-2, were found to increase with a faster cooling rate.

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Ultrathin Nanocrystalline Diamond Films with Silicon Vacancy Color Centers via Seeding by 2 nm Detonation Nanodiamonds

ACS Applied Materials & Interfaces ◽

10.1021/acsami.7b14436 ◽

2017 ◽

Vol 9 (44) ◽

pp. 38842-38853 ◽

Cited By ~ 22

Author(s):

Stepan Stehlik ◽

Marian Varga ◽

Pavla Stenclova ◽

Lukas Ondic ◽

Martin Ledinsky ◽

...

Keyword(s):

Diamond Films ◽

Nanocrystalline Diamond ◽

Detonation Nanodiamonds ◽

Color Centers ◽

Silicon Vacancy ◽

Nanocrystalline Diamond Films

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Defect reduction in oxygen implanted silicon-on-insulator material during high-temperature annealing

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100154998 ◽

1989 ◽

Vol 47 ◽

pp. 604-605

Author(s):

P. Roitman ◽

B. Cordts ◽

S. Visitserngtrakul ◽

S.J. Krause

Keyword(s):

High Temperature ◽

Annealing Temperature ◽

Silicon On Insulator ◽

High Dose ◽

High Temperature Annealing ◽

High Current ◽

Defect Reduction ◽

Annealing Step ◽

Multiple Cycle ◽

Defect Densities

Synthesis of a thin, buried dielectric layer to form a silicon-on-insulator (SOI) material by high dose oxygen implantation (SIMOX – Separation by IMplanted Oxygen) is becoming an important technology due to the advent of high current (200 mA) oxygen implanters. Recently, reductions in defect densities from 109 cm−2 down to 107 cm−2 or less have been reported. They were achieved with a final high temperature annealing step (1300°C – 1400°C) in conjunction with: a) high temperature implantation or; b) channeling implantation or; c) multiple cycle implantation. However, the processes and conditions for reduction and elimination of precipitates and defects during high temperature annealing are not well understood. In this work we have studied the effect of annealing temperature on defect and precipitate reduction for SIMOX samples which were processed first with high temperature, high current implantation followed by high temperature annealing.

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Simulation of the Process of Creation of Thin Silicide Films on Silicon under High-temperature Annealing

Journal of Automation and Information Sciences ◽

10.1615/jautomatinfscien.v33.i1.50 ◽

2001 ◽

Vol 33 (1) ◽

pp. 7

Author(s):

Ivan S. Levchenko ◽

Anatoliy A. Sukennyk ◽

Georgiy A. Chechko

Keyword(s):

High Temperature ◽

High Temperature Annealing

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FERROPERM

Alloy Digest ◽

10.31399/asm.ad.fe0099 ◽

1993 ◽

Vol 42 (4) ◽

Keyword(s):

Fracture Toughness ◽

High Temperature ◽

Physical Properties ◽

Saturation Magnetization ◽

Pure Iron ◽

Magnetic Alloy ◽

High Saturation Magnetization ◽

High Temperature Annealing ◽

Soft Magnetic ◽

Soft Magnetic Alloy

Abstract Ferroperm is a soft magnetic alloy that contains 1% aluminum. This addition of aluminum combined with high-temperature annealing increases permeability and reduces coercivity without decreasing the high-saturation magnetization of pure iron. This datasheet provides information on composition, physical properties, elasticity, and tensile properties as well as fracture toughness. It also includes information on forming. Filing Code: FE-99. Producer or source: NKK Corporation.

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