The Determination of the Orientation and Thickness of Thin Foils from Transmission Electron Micrographs

1964 ◽  
Vol 6 (1) ◽  
pp. 151-162 ◽  
Author(s):  
A. G. Crocker ◽  
M. Bevis
Keyword(s):  
Electron Micrographs ◽  
Transmission Electron Micrographs ◽  
Thin Foils ◽  
Transmission Electron

scholarly journals Identifying Atoms in High Resolution Transmission Electron Micrographs Using a Deep Convolutional Neural Net

2018 ◽  
Vol 24 (S1) ◽  
pp. 512-513 ◽  
Author(s):  
Jakob Schiøtz ◽  
Jacob Madsen ◽  
Pei Liu ◽  
Ole Winther ◽  
Jens Kling ◽  
...  
Keyword(s):  
High Resolution ◽  
Electron Micrographs ◽  
Transmission Electron Micrographs ◽  
Neural Net ◽  
Transmission Electron

Dislocation Structures in Ni3(Al, Hf)

1996 ◽  
Vol 460 ◽  
Author(s):  
T. Kruml ◽  
B. Viguier ◽  
J. Bonneville ◽  
P. Spätig ◽  
J. L. Martin
Keyword(s):  
Electron Microscopy ◽  
Antiphase Boundary ◽  
Image Simulation ◽  
Compression Tests ◽  
Simulation Techniques ◽  
Weak Beam ◽  
Thin Foils ◽  
Transmission Electron ◽  
Different Temperatures

ABSTRACTSingle crystalline specimens of Ni74.8Al21.9Hf3.3 were subjected to compression tests at different temperatures. Thin foils for transmission electron microscopy observations were prepared from several specimens deformed within and above the yield stress anomaly domain. The dislocation microstructure was studied. The weak beam imaging and image simulation techniques followed by anisotropie elasticity calculations were used for the determination of antiphase boundary energies in both cube and octahedral planes, resulting in values of 237 mJm-2 and 252 mJm-2 respectively. The comparison of the present results with data taken from literature shows the influence of Hf on mechanical properties, dislocation microstructures and APB energies.

Gettering of Cu to hydrogen-induced cavities in Si

1996 ◽  
Vol 74 (S1) ◽  
pp. 248-251 ◽  
Author(s):  
K. C. Hall ◽  
R. D. Goldberg ◽  
T. D. Lowes ◽  
P. J. Simpson ◽  
I. V. Mitchell ◽  
...  
Keyword(s):  
Positron Annihilation ◽  
Electron Micrographs ◽  
Room Temperature ◽  
Diffusion Profile ◽  
Rutherford Backscattering ◽  
Transmission Electron Micrographs ◽  
Transmission Electron

Gettering sites comprising dislocations and voids have been formed in silicon at a depth of 0.8 μm by room-temperature implantation with 80 keV energy protons to a fluence of 3 × 1016 cm−2, followed by annealing at a temperature of 800 °C for 20 min. Copper was evaporated onto the Si surface then diffused by heating at 600 °C for times between 5 and 60 min. Subsequently, positron annihilation measurements were used to profile the samples for void and (or) vacancy content. Rutherford backscattering quantified metal trapping out of the diffusion profile to the gettering sites. Transmission electron micrographs identified Cu trapping at both dislocations and voids. Cavities exhibit different morphologies between the empty (void) and filled condition; the latter are strongly faceted and found to contain bulk silicide.

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