Impact of native defects and impurities in m−HfO2and β−Si3N4on charge trapping memory devices: A first principle hybrid functional study
2016 ◽
Vol 254
(2)
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pp. 1600360
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2014 ◽
Vol 53
(8S3)
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pp. 08NG02
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2016 ◽
Vol 30
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pp. 1650279
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2004 ◽
Vol 25
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pp. 810-812
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2004 ◽
Vol 48
(9)
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pp. 1525-1530
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