Vapor-liquid-solid synthesis of ZnSnN2

2017 ◽  
Vol 254 (8) ◽  
pp. 1600718 ◽  
Author(s):  
Paul C. Quayle ◽  
Grant T. Junno ◽  
Keliang He ◽  
Eric W. Blanton ◽  
Jie Shan ◽  
...  
2010 ◽  
Author(s):  
C. B. Li ◽  
K. Usami ◽  
H. Mizuta ◽  
S. Oda ◽  
Marília Caldas ◽  
...  

ACS Nano ◽  
2019 ◽  
Vol 13 (5) ◽  
pp. 6060-6070 ◽  
Author(s):  
You Meng ◽  
Changyong Lan ◽  
Fangzhou Li ◽  
SenPo Yip ◽  
Renjie Wei ◽  
...  

2009 ◽  
Vol 9 (8) ◽  
pp. 4846-4850 ◽  
Author(s):  
Willinton Farfán ◽  
Edgar Mosquera ◽  
Rajasekarakumar Vadapoo ◽  
Sridevi Krishnan ◽  
Carlos Marín

2020 ◽  
Vol 32 (7) ◽  
pp. 075603
Author(s):  
Thang Pham ◽  
Sampath Kommandur ◽  
Haeyeon Lee ◽  
Dmitri Zakharov ◽  
Michael A Filler ◽  
...  

2010 ◽  
Vol 10 (9) ◽  
pp. 5847-5850 ◽  
Author(s):  
Willinton Farfán ◽  
Edgar Mosquera ◽  
Rajasekarakumar Vadapoo ◽  
Sridevi Krishnan ◽  
Carlos Marín

2016 ◽  
Vol 27 (20) ◽  
pp. 205701 ◽  
Author(s):  
N Kaur ◽  
E Comini ◽  
D Zappa ◽  
N Poli ◽  
G Sberveglieri

1998 ◽  
Vol 536 ◽  
Author(s):  
N. Ozaki ◽  
Y. Ohno ◽  
S. Takeda ◽  
M. Hirata

AbstractWe have grown Si nanowhiskers on a Si{1111} surface via the vapor-liquid-solid (VLS) mechanism. The minimum diameter of the crystalline is 3nm and is close to the critical value for the effect of quantum confinement. We have found that many whiskers grow epitaxially or non-epitaxially on the substrate along the 〈112〉 direction as well as the 〈111〉 direction.In our growth procedure, we first deposited gold on a H-terminated Si{111} surface and prepared the molten catalysts of Au and Si at 500°C. Under the flow of high pressure silane gas, we have succeeded in producing the nanowhiskers without any extended defects. We present the details of the growth condition and discuss the growth mechanism of the nanowhiskers extending along the 〈112〉 direction.


2020 ◽  
Vol 55 (1) ◽  
pp. 32-37
Author(s):  
A. Yu. Vorob’ev ◽  
V. A. Nebol’sin ◽  
N. Swaikat ◽  
V. A. Yuriev

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