Dielectric Screening, Polar Phonons, and Longitudinal Electronic Excitations of Quantum Well Double Heterostructures Application to Light Scattering from Charge Density Fluctuations

1985 ◽  
Vol 131 (1) ◽  
pp. 53-66 ◽  
Author(s):  
F. Bechstedt ◽  
R. Enderlein
1995 ◽  
Vol 395 ◽  
Author(s):  
D.A.S. Loeber ◽  
J.M. Redwing ◽  
N.G. Anderson ◽  
M.A. Tischler

ABSTRACTEdge emission characteristics of optically pumped GaN-AlGaN double heterostructures and quantum wells are examined. The samples, which were grown by metalorganic vapor phase epitaxy, are photoexcited with light from a pulsed nitrogen laser. The pump light is focused to a narrow stripe on the sample surface, oriented perpendicular to a cleaved edge, and the edge luminescence is collected and analyzed. We first compare emission characteristics of highly excited GaN-AlGaN double heterostructures grown simultaneously on SiC and sapphire substrates. Polarization resolved spectral properties of edge luminescence from both structures is studied as a function of pump intensity and excitation stripe length. Characteristics indicative of stimulated emission are observed, particularly in the sample grown on SiC. We then present results demonstrating laser emission from a GaN-AlGaN separate-confinement quantum-well heterostructure. At high pump intensities, band edge emission from the quantum well exhibits five narrow (∼1 Å) modes which are evenly spaced by 10Å to within the resolution of the spectrometer. This represents the first demonstration of laser action in a GaN-based quantum-well structure.


2012 ◽  
Vol 407 (11) ◽  
pp. 1823-1826 ◽  
Author(s):  
Rebecca Beyer ◽  
Neven Barišić ◽  
Martin Dressel

1989 ◽  
Vol 162-164 ◽  
pp. 1409-1414 ◽  
Author(s):  
V.B. Timofeev ◽  
A.A. Maksimov ◽  
O.V. Misochko ◽  
I.I. Tartakovskii

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