On Electron States of Quantum Wells in Ultrathin Films of Wide-Gap Semiconductors in an Oriented Magnetic Field

1988 ◽  
Vol 146 (2) ◽  
pp. 525-530 ◽  
Author(s):  
M. K. Bose ◽  
C. Majumdar ◽  
A. B. Maity ◽  
A. N. Chakravarti
2003 ◽  
Vol 02 (06) ◽  
pp. 401-409
Author(s):  
A. A. GRESHNOV ◽  
E. N. KOLESNIKOVA ◽  
G. G. ZEGRYA

The structure and features of spatially-confined states in the presence of a tilted magnetic field are theoretically investigated. The electron states in single- and double-quantum wells are described using the variational method. It is shown that the finite ratio of magnetic length to the width of heterostructure could not be neglected in the strong tilted magnetic field. The electronic structure of broken-gap heterostructures is considered similar to the case of usual double-quantum-well with the high narrow barrier. It is shown that tilted magnetic field can eliminate the strong coupling between two degenerated electron states or those of the electron and hole. The existence of such an effect is in accordance with cyclotron resonance studies of InAs / GaSb heterostructures.


1987 ◽  
Vol 48 (C5) ◽  
pp. C5-159-C5-162
Author(s):  
A. FORCHEL ◽  
U. CEBULLA ◽  
G. TRÄNKLE ◽  
W. OSSAU ◽  
G. GRIFFITHS ◽  
...  
Keyword(s):  

1990 ◽  
Vol 216 ◽  
Author(s):  
Kamakhya P. Ghatak ◽  
S. N. Biswas

ABSTRACTIn this paper we studied the thermoelectric power under classically large magnetic field (TPM) in quantum wells (QWs), quantum well wires (QWWS) and quantum dots (QDs) of Bi by formulating the respective electron dispersion laws. The TPM increases with increasing film thickness in an oscillatory manner in all the cases. The TPM in QD is greatest and the least for quantum wells respectively. The theoretical results are in agreement with the experimental observations as reported elsewhere.


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