SPECTRUM OF CARRIERS AND OPTICAL PROPERTIES OF 2D HETEROSTRUCTURES IN TILTED MAGNETIC FIELD

2003 ◽  
Vol 02 (06) ◽  
pp. 401-409
Author(s):  
A. A. GRESHNOV ◽  
E. N. KOLESNIKOVA ◽  
G. G. ZEGRYA

The structure and features of spatially-confined states in the presence of a tilted magnetic field are theoretically investigated. The electron states in single- and double-quantum wells are described using the variational method. It is shown that the finite ratio of magnetic length to the width of heterostructure could not be neglected in the strong tilted magnetic field. The electronic structure of broken-gap heterostructures is considered similar to the case of usual double-quantum-well with the high narrow barrier. It is shown that tilted magnetic field can eliminate the strong coupling between two degenerated electron states or those of the electron and hole. The existence of such an effect is in accordance with cyclotron resonance studies of InAs / GaSb heterostructures.

1997 ◽  
Vol 92 (5) ◽  
pp. 981-984 ◽  
Author(s):  
L. Smrčka ◽  
P. Vašek ◽  
T. Jungwirth ◽  
O.N. Makarovskii ◽  
M. Cukr ◽  
...  

1999 ◽  
Vol 26 (5) ◽  
pp. 299-305
Author(s):  
S. Elagoz ◽  
H. Elagoz ◽  
H. Sari ◽  
Y. Ergün ◽  
P. Karasu ◽  
...  

Author(s):  
Yu.G. Arapov ◽  
S.V. Gudina ◽  
A.S. Klepikova ◽  
V.N. Neverov ◽  
G.I. Harus ◽  
...  

The dependences of the longitudinal and Hall resistances on a magnetic field in n-InGaAs/GaAs heterostructures with a single and double quantum wells after infrared illumination are measured in the range of magnetic fields B=0-16 T and temperatures T=0.05-4.2 K. Analysis of the experimental results was carried out on a base of two-parameter scaling hypothesis for the integer quantum Hall effect. The value of the second (irrelevant) critical exponent of the theory of two-parameter scaling was estimated. DOI: 10.21883/FTP.2017.02.44119.8302


2004 ◽  
Vol 03 (04n05) ◽  
pp. 541-547
Author(s):  
I. Yu. GOLINEY ◽  
S. B. LEV ◽  
V. I. SUGAKOV ◽  
G. V. VERTSIMAKHA

Magnetic field dependence of the excitonic spectrum and the intensity of the optical transitions for excitons in the double quantum well heterostructures based on semimagnetic semiconductors of various compositions are studied. The calculations carried out for (Zn, Mn)Se -based double quantum well structures showed that in the weak magnetic fields, the lowest energy states are the single-well states (direct excitons) for which both the electron and the hole are predominantly localized in the same well. At some values of magnetic field, the crossing of the direct exciton with indirect exciton formed by an electron and a hole, situated predominantly in the different wells, occurs. In the magnetic field exceeding some critical value, the lowest energy level belongs to the indirect exciton. According to the estimates, the lifetime of the indirect exciton is by several orders of magnitude larger than that of a single-well exciton. The exciton lifetime depends significantly on the width and the material of the barrier between the wells.


2007 ◽  
Vol 21 (08n09) ◽  
pp. 1589-1593
Author(s):  
A. GÜRTLER ◽  
U. ZEITLER ◽  
J. C. MAAN ◽  
D. REUTER ◽  
A. D. WIECK

We present far-infrared cyclotron resonance measurements on a strongly coupled symmetric GaAs/GaAlAs double quantum well sample. Cyclotron resonance is measured at several discrete wavelengths and tilt angles of the sample with respect to the magnetic field. The width and strength of the resonance peaks depend strongly on the tilt angle and the laser wavelength, demonstrating the complexity of this system.


2007 ◽  
Vol 06 (03n04) ◽  
pp. 173-177
Author(s):  
YU. G. ARAPOV ◽  
S. V. GUDINA ◽  
G. I. HARUS ◽  
V. N. NEVEROV ◽  
N. G. SHELUSHININA ◽  
...  

The resistivity (ρ) of low mobility dilute 2D electron gas in an n- InGaAs / GaAs double quantum well (DQW) exhibits the monotonic "insulating-like" temperature dependence (dρ/dT < 0) at T = 1.8–70 K in zero magnetic field. This temperature interval corresponds to a ballistic regime (kBTτ/ħ > 0.1–3.5) for our samples, and the electron density is on an "insulating" side of the so-called B = 0 2D metal–insulator transition. We show that the observed features of localization and Landau quantization in a vicinity of the low magnetic-field-induced insulator–quantum Hall liquid transition is due to the σxy(T) anomalous T-dependence.


1994 ◽  
Vol 73 (16) ◽  
pp. 2256-2259 ◽  
Author(s):  
J. A. Simmons ◽  
S. K. Lyo ◽  
N. E. Harff ◽  
J. F. Klem

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