The role of radiative and nonradiative relaxation processes in the generation of light from silicon nanocrystals

2005 ◽  
Vol 2 (9) ◽  
pp. 3440-3444 ◽  
Author(s):  
M. Dovrat ◽  
Y. Goshen ◽  
I. Popov ◽  
J. Jedrzejewski ◽  
I. Balberg ◽  
...  
Keyword(s):  
Silicon Nanocrystals ◽  
Relaxation Processes ◽  
Nonradiative Relaxation

Role of Energy Migration in Nonradiative Relaxation Processes in ErxY2-xSiO5Crystalline Thin Films

2013 ◽  
Vol 52 (8R) ◽  
pp. 082601 ◽  
Author(s):  
Takayuki Nakajima ◽  
Yasuhito Tanaka ◽  
Tadamasa Kimura ◽  
Hideo Isshiki
Keyword(s):  
Thin Films ◽  
Energy Migration ◽  
Relaxation Processes ◽  
Nonradiative Relaxation

Photoluminescence behavior of silicon nanocrystals: Role of surface chemistry and size

2008 ◽  
Author(s):  
Anoop Gupta ◽  
Folarin Erogbogbo ◽  
Mark T. Swihart ◽  
Hartmut Wiggers
Keyword(s):  
Surface Chemistry ◽  
Silicon Nanocrystals ◽  
Photoluminescence Behavior

Thermal quenching behavior of Er-doped silicon-rich SiO2 prepared by ion implantation

2004 ◽  
Vol 19 (9) ◽  
pp. 2699-2702 ◽  
Author(s):  
C.S. Zhang ◽  
H.B Xiao ◽  
Y.J. Wang ◽  
Z.J. Chen ◽  
X.L. Cheng ◽  
...  
Keyword(s):  
Silicon Nanocrystals ◽  
Annealing Temperature ◽  
Thermal Quenching ◽  
X Ray Diffraction ◽  
X Ray ◽  
Radiative Processes ◽  
Transmission Electron ◽  
Weak Intensity ◽  
Er Doped

Erbium and silicon were dual implanted into thermally grown SiO2 film on Si (110) substrates, followed by thermal treatment at 700–1200 °C for 30 min. The microstructure was studied by transmission electron microscope and x-ray diffraction. When the implanted films were annealed at T > 900 °C, the silicon nanocrystals (nc-Si) enwrapped by amorphous silicon (a-Si) could be observed. The thermal quenching behavior at λ = 1.535 μm and its relation with the annealling temperature were also investigated. With increasing annealing temperature, the portion of a-Si and the thermal quenching both decreased. Efficient luminescence from Er ions and weak intensity thermal quenching were obtained from the sample annealed at 1100 °C. The role of a-Si in non-radiative processes at T > 100 K is discussed.

The role of non-equilibrium fluxes in the relaxation processes of the linear chemical master equation

2014 ◽  
Vol 141 (6) ◽  
pp. 065102 ◽  
Author(s):  
Luciana Renata de Oliveira ◽  
Armando Bazzani ◽  
Enrico Giampieri ◽  
Gastone C. Castellani
Keyword(s):  
Master Equation ◽  
Chemical Master Equation ◽  
Relaxation Processes ◽  
Non Equilibrium

Role of defects during amorphization and relaxation processes in Si

1996 ◽  
pp. 198-205
Author(s):  
T. Motooka ◽  
Y. Hiroyama ◽  
R. Suzuki ◽  
T. Ohdaira ◽  
Y. Hirano ◽  
...  
Keyword(s):  
Relaxation Processes
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