Electron hopping-randomwalk at localized band tail states with exponential density in amorphous hydrogenated silicon

2008 ◽  
Vol 5 (3) ◽  
pp. 777-781 ◽  
Author(s):  
Kazuro Murayama ◽  
Tatuya Fujisaki ◽  
Yukio Nomura
1992 ◽  
Vol 258 ◽  
Author(s):  
Man Ken Cheung ◽  
Mark A. Petrich

ABSTRACTThe microstructure of high-density amorphous hydrogenated silicon (a-S.i:H) films deposited at 50°C substrate temperature was revealed by infrared (IR) and nuclear magnetic resonance (NMR) spectroscopies to be similar to that of “device-quality” a-Si:H films deposited at standard “optimum” conditions. However, optical absorption measurements of these low microstructure 50°C films with photothermal deflection spectroscopy indicate that they have higher densities of gap state defects and localized band tail states than “device-quality” films deposited at standard substrate temperatures. The correlation between the amount of microstructure and electronic properties is not unique. A low amount of microstructure is a necessary, but not sufficient, requirement for high electronic quality a-Si:H films.


2010 ◽  
Vol 207 (3) ◽  
pp. 561-565 ◽  
Author(s):  
Kazuro Murayama ◽  
Yukio Nomura ◽  
Tatsuya Fujisaki

1993 ◽  
Vol 164-166 ◽  
pp. 235-238 ◽  
Author(s):  
O. Klíma ◽  
O. Štika ◽  
Ho Tha Ha ◽  
S. Fouad Abdel Hamied ◽  
J. Stuchlík ◽  
...  

1998 ◽  
Vol 1 (2) ◽  
pp. 81-85
Author(s):  
Clara EE Hanekamp ◽  
Hans JRM Bonnier ◽  
Rolf H Michels ◽  
Kathinka H Peels ◽  
Eric PCM Heijmen ◽  
...  

1996 ◽  
Vol 43 (9) ◽  
pp. 1592-1601 ◽  
Author(s):  
S.J. Bijlsma ◽  
H. van Kranenburg ◽  
K.J.B.M. Nieuwesteeg ◽  
M.G. Pitt ◽  
J.F. Verweij

Sign in / Sign up

Export Citation Format

Share Document