Comparative study of temperature-dependent electroluminescence efficiency in blue and green (In,Ga)N multiple-quantum-well diodes

2008 ◽  
Vol 5 (6) ◽  
pp. 2105-2107
Author(s):  
H. Jimi ◽  
T. Inada ◽  
M. Horiguchi ◽  
A. Satake ◽  
K. Fujiwara
1985 ◽  
Vol 56 ◽  
Author(s):  
H. NEFF ◽  
K. J. BACHMANN ◽  
W. D. LAIDIG

AbstractEmploying temperature dependent photoconductivity, photoluminescence and photoreflectivity measurements, we have analyzed a GaAs-AlAs multiple quantum well. The above optical techniques clearly resolve the fundamental inter-subband transitions, including heavy hole-light hole splittings. At T < 60K an anomalously high photoconductivity was discovered below the direct inter-subband transitions and is attributed tentatively to the presence of extrinsic interface states within the bandgap. For T > l00K the fundamental indirect transition was discovered and associated with LO (L) - phonon absorption.


2021 ◽  
Author(s):  
Guo-En Chang ◽  
Kuan-Chih Lin ◽  
Po-Rei Huang ◽  
Hui Li ◽  
Henry Cheng

2014 ◽  
Vol 4 (2) ◽  
pp. 607-613 ◽  
Author(s):  
Kasidit Toprasertpong ◽  
Hiromasa Fujii ◽  
Yunpeng Wang ◽  
Kentaroh Watanabe ◽  
Masakazu Sugiyama ◽  
...  

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