Temperature‐dependent characteristics of GaAs/AlGaAs multiple‐quantum‐well optical modulators

1989 ◽  
Vol 66 (8) ◽  
pp. 3445-3452 ◽  
Author(s):  
R. B. Bailey ◽  
R. Sahai ◽  
C. Lastufka ◽  
K. Vural
1985 ◽  
Vol 56 ◽  
Author(s):  
H. NEFF ◽  
K. J. BACHMANN ◽  
W. D. LAIDIG

AbstractEmploying temperature dependent photoconductivity, photoluminescence and photoreflectivity measurements, we have analyzed a GaAs-AlAs multiple quantum well. The above optical techniques clearly resolve the fundamental inter-subband transitions, including heavy hole-light hole splittings. At T < 60K an anomalously high photoconductivity was discovered below the direct inter-subband transitions and is attributed tentatively to the presence of extrinsic interface states within the bandgap. For T > l00K the fundamental indirect transition was discovered and associated with LO (L) - phonon absorption.


2021 ◽  
Author(s):  
Guo-En Chang ◽  
Kuan-Chih Lin ◽  
Po-Rei Huang ◽  
Hui Li ◽  
Henry Cheng

1992 ◽  
Vol 28 (1) ◽  
pp. 224-230 ◽  
Author(s):  
K. Kawano ◽  
K. Wakita ◽  
O. Mitomi ◽  
I. Kotaka ◽  
M. Naganuma

1995 ◽  
Vol 78 (3) ◽  
pp. 1411-1414 ◽  
Author(s):  
T. K. Woodward ◽  
J. E. Cunningham ◽  
W. Y. Jan

Sign in / Sign up

Export Citation Format

Share Document