In-situ passivation combined with GaN buffer optimization for extremely low current dispersion and low gate leakage in Si3N4/AlGaN/GaN HEMT devices on Si (111)

2008 ◽  
Vol 5 (6) ◽  
pp. 2010-2012 ◽  
Author(s):  
M. Germain ◽  
K. Cheng ◽  
J. Derluyn ◽  
S. Degroote ◽  
J. Das ◽  
...  
Keyword(s):  
Gate Leakage ◽  
Gan Hemt

Suppression of gate leakage current in in-situ grown AlN/InAlN/AlN/GaN heterostructures based on the control of internal polarization fields

2017 ◽  
Vol 121 (11) ◽  
pp. 115704 ◽  
Author(s):  
Junji Kotani ◽  
Atsushi Yamada ◽  
Tetsuro Ishiguro ◽  
Hideshi Yamaguchi ◽  
Norikazu Nakamura
Keyword(s):  
Leakage Current ◽  
Gate Leakage Current ◽  
Gate Leakage

In situ epitaxial surface passivation of GaAlN/GaN HEMT heterostructures grown by LP-MOCVD

2007 ◽  
Vol 298 ◽  
pp. 826-830 ◽  
Author(s):  
M.-A. di Forte Poisson ◽  
N. Sarazin ◽  
M. Magis ◽  
M. Tordjman ◽  
E. Morvan ◽  
...  
Keyword(s):  
Surface Passivation ◽  
Gan Hemt

Gate leakage currents of AlGaN/GaN HEMT structures grown by metalorganic vapour phase epitaxy

2007 ◽  
Vol 4 (7) ◽  
pp. 2690-2694 ◽  
Author(s):  
T. Yamada ◽  
T. Tsuchiya ◽  
K. Imada ◽  
M. Iwami ◽  
J. Kikawa ◽  
...  
Keyword(s):  
Vapour Phase ◽  
Gate Leakage ◽  
Leakage Currents ◽  
Vapour Phase Epitaxy ◽  
Gan Hemt ◽  
Metalorganic Vapour Phase Epitaxy

Reduced gate leakage current in AlGaN/GaN HEMT by oxygen passivation of AlGaN surface

2008 ◽  
Vol 44 (18) ◽  
pp. 1091 ◽  
Author(s):  
S.K. Hong ◽  
K.H. Shim ◽  
J.W. Yang
Keyword(s):  
Leakage Current ◽  
Gate Leakage Current ◽  
Gate Leakage ◽  
Gan Hemt

Structure and Interface Analysis of Diamond on an AlGaN/GaN HEMT Utilizing an in Situ SiNx Interlayer Grown by MOCVD

2019 ◽  
Vol 1 (8) ◽  
pp. 1387-1399 ◽  
Author(s):  
Anwar Siddique ◽  
Raju Ahmed ◽  
Jonathan Anderson ◽  
Mohammad Nazari ◽  
Luke Yates ◽  
...  
Keyword(s):  
Interface Analysis ◽  
Gan Hemt

AlGaN/GaN HEMT grown on large size silicon substrates by MOVPE capped with in-situ deposited Si3N4

2007 ◽  
Vol 298 ◽  
pp. 822-825 ◽  
Author(s):  
Kai Cheng ◽  
M. Leys ◽  
J. Derluyn ◽  
S. Degroote ◽  
D.P. Xiao ◽  
...  
Keyword(s):  
Silicon Substrates ◽  
Gan Hemt ◽  
Large Size

Gate leakage current sensing for in situ temperature monitoring of p-GaN gate HEMTs

2020 ◽  
Vol 114 ◽  
pp. 113762
Author(s):  
A. Borghese ◽  
M. Riccio ◽  
G. Longobardi ◽  
L. Maresca ◽  
G. Breglio ◽  
...  
Keyword(s):  
Leakage Current ◽  
Temperature Monitoring ◽  
Gate Leakage Current ◽  
Gate Leakage ◽  
Current Sensing
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