Suppression of gate leakage current in in-situ grown AlN/InAlN/AlN/GaN heterostructures based on the control of internal polarization fields

2017 ◽  
Vol 121 (11) ◽  
pp. 115704 ◽  
Author(s):  
Junji Kotani ◽  
Atsushi Yamada ◽  
Tetsuro Ishiguro ◽  
Hideshi Yamaguchi ◽  
Norikazu Nakamura
Keyword(s):  
Leakage Current ◽  
Gate Leakage Current ◽  
Gate Leakage

Gate leakage current sensing for in situ temperature monitoring of p-GaN gate HEMTs

2020 ◽  
Vol 114 ◽  
pp. 113762
Author(s):  
A. Borghese ◽  
M. Riccio ◽  
G. Longobardi ◽  
L. Maresca ◽  
G. Breglio ◽  
...  
Keyword(s):  
Leakage Current ◽  
Temperature Monitoring ◽  
Gate Leakage Current ◽  
Gate Leakage ◽  
Current Sensing

scholarly journals Oxygen vacancy drift controlled three-terminal ReRAM with a reduction in operating gate bias and gate leakage current

2018 ◽  
Vol 328 ◽  
pp. 30-34 ◽  
Author(s):  
Qi Wang ◽  
Yaomi Itoh ◽  
Tohru Tsuruoka ◽  
Masakazu Aono ◽  
Deyan He ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Leakage Current ◽  
Gate Bias ◽  
Gate Leakage Current ◽  
Gate Leakage
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