Recent Progress on Aluminum Gallium Nitride Deep Ultraviolet Lasers by Molecular Beam Epitaxy

2021 ◽  
Author(s):  
Qihua Zhang ◽  
Xue Yin ◽  
Songrui Zhao
Keyword(s):  
Gallium Nitride ◽  
Molecular Beam Epitaxy ◽  
Aluminum Gallium Nitride ◽  
Molecular Beam ◽  
Recent Progress ◽  
Deep Ultraviolet ◽  
Ultraviolet Lasers

Growth of gallium nitride on silicon by molecular beam epitaxy incorporating a chromium nitride interlayer

2012 ◽  
Vol 511 (1) ◽  
pp. 1-4 ◽  
Author(s):  
Kuang-Wei Liu ◽  
Sheng-Joue Young ◽  
Shoou-Jinn Chang ◽  
Tao-Hung Hsueh ◽  
Hung Hung ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Chromium Nitride

Piezoelectric Coefficients of Aluminum Nitride and Gallium Nitride

1999 ◽  
Vol 572 ◽  
Author(s):  
C. M. Lueng ◽  
H. L. W. Chan ◽  
W. K. Fong ◽  
C. Surya ◽  
C. L. Choy
Keyword(s):  
Thin Films ◽  
Gallium Nitride ◽  
High Temperature ◽  
Molecular Beam Epitaxy ◽  
Aluminum Nitride ◽  
Composite Film ◽  
High Frequency ◽  
Molecular Beam ◽  
Silicon Substrates ◽  
Heterodyne Interferometer

ABSTRACTAluminum nitride (AlN) and gallium nitride (GaN) thin films have potential uses in high temperature, high frequency (e.g. microwave) acoustic devices. In this work, the piezoelectric coefficients of wurtzite AlN and GaN/AlN composite film grown on silicon substrates by molecular beam epitaxy were measured by a Mach-Zehnder type heterodyne interferometer. The effects of the substrate on the measured coefficients are discussed.

Surface reconstructions of cubic gallium nitride (001) grown by radio frequency nitrogen plasma molecular beam epitaxy under gallium-rich conditions

2006 ◽  
Vol 100 (8) ◽  
pp. 083516 ◽  
Author(s):  
Muhammad B. Haider ◽  
Rong Yang ◽  
Costel Constantin ◽  
Erdong Lu ◽  
Arthur R. Smith ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Molecular Beam Epitaxy ◽  
Radio Frequency ◽  
Molecular Beam ◽  
Nitrogen Plasma ◽  
Surface Reconstructions

The use of magnesium to dope gallium nitride obtained by molecular-beam epitaxy from activated nitrogen

2003 ◽  
Vol 37 (7) ◽  
pp. 838-842 ◽  
Author(s):  
A. A. Vorob’ev ◽  
V. V. Korablev ◽  
S. Yu. Karpov
Keyword(s):  
Gallium Nitride ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam

ChemInform Abstract: Recent Progress in Molecular Beam Epitaxy of HgCdTe

ChemInform ◽  
2010 ◽  
Vol 30 (45) ◽  
pp. no-no
Author(s):  
Li He ◽  
Jianrong Yang ◽  
Shanli Wang ◽  
Yan Wu ◽  
Weizheng Fang
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Recent Progress
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