Analysis of cluster ion sputtering yields: correlation with the thermal spike model and implications for static secondary ion mass spectrometry

2007 ◽  
Vol 39 (7) ◽  
pp. 634-643 ◽  
Author(s):  
M. P. Seah
Keyword(s):  
Mass Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
Ion Sputtering ◽  
Thermal Spike ◽  
Thermal Spike Model ◽  
Spike Model ◽  
Ion Mass Spectrometry ◽  
Cluster Ion ◽  
Sputtering Yields ◽  
Secondary Ion

MASS SPECTRA AND DISSOCIATION PATTERNS OF TELLURIUM CLUSTERS USING POSITIVE AND NEGATIVE SECONDARY-ION MASS SPECTROMETRY

1996 ◽  
Vol 03 (01) ◽  
pp. 577-582 ◽  
Author(s):  
H. ITO ◽  
T. SAKURAI ◽  
T. MATSUO ◽  
T. ICHIHARA ◽  
I. KATAKUSE
Keyword(s):  
Mass Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
Cluster Ions ◽  
Mass Spectrometers ◽  
Scanning Method ◽  
Ion Mass Spectrometry ◽  
Cluster Ion ◽  
Sector Type ◽  
Fragmentation Patterns ◽  
Secondary Ion

Size distribution of positive and negative tellurium clusters in the size range from 2 to 56 atoms was investigated by secondary-ion mass spectrometry (SIMS). Cluster ions were produced by the 12-keV Xe+ ions bombardment of a sample tellurium sheet and were mass-analyzed using sector-type double-focusing mass spectrometers. It was found that a discontinuous variation of cluster-ion intensity appeared at specific numbers of n. These numbers were 5, 8, 12, 15, 19, and 23 for positive clusters and 6, 10, 13, and 16 for negative clusters. The dissociation pattern was also investigated by an acceleration-voltage scanning method. It was found that Te2, Te5, and Te6 fragmentation events occurred at a large probability. Observation of specific fragmentation patterns suggested the existence of nonsequential fragment channels.

scholarly journals Soft Ion Sputtering of PAni Studied by XPS, AFM, TOF-SIMS, and STS

Coatings ◽  
2020 ◽  
Vol 10 (10) ◽  
pp. 967
Author(s):  
Christopher M. Goodwin ◽  
Zachary E. Voras ◽  
Xiao Tong ◽  
Thomas P. Beebe
Keyword(s):  
Mass Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
Time Of Flight ◽  
Argon Atom ◽  
Scanning Tunneling Spectroscopy ◽  
Scanning Tunneling ◽  
Ion Sputtering ◽  
Tof Sims ◽  
Ion Mass Spectrometry ◽  
Secondary Ion

Herein is a study of the soft sputtering method, gas cluster ion sputtering (GCIS), and its effects on the atomic, morphologic, and band structure properties of polyaniline (PAni) as studied with X-ray photoelectron spectroscopy (XPS), time-of-flight secondary ion mass spectrometry, atomic force microscopy, and scanning tunneling spectroscopy (STS). The GCIS source used was a 1000 argon atom cluster with 4 keV energy, which resulted in a sputter yield of 3.4 ± 0.2 × 10−3 nm3 per argon atom. Soft ion sputtering reduced the sample by explicitly removing the oxidized contaminants as determined by surface sensitive techniques: XPS and Time-of-flight secondary ion mass spectrometry (TOF-SIMS). By the use of STS we found that by removing the oxidized components, an overall shift of electronic states occurred, transitioning the states closer to the Fermi edge by 0.3 V.

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