Deep depth profiling using gas cluster secondary ion mass spectrometry: Micrometer topography development and effects on depth resolution

2021 ◽  
Author(s):  
Shin Muramoto ◽  
Daniel J. Graham
Keyword(s):  
Mass Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
Depth Profiling ◽  
Depth Resolution ◽  
Ion Mass Spectrometry ◽  
Deep Depth ◽  
Secondary Ion

scholarly journals Новое ограничение разрешения по глубине при послойном элементном анализе методом времяпролетной вторично-ионной масс-спектрометрии: влияние зондирующего ионного пучка

2018 ◽  
Vol 44 (8) ◽  
pp. 11
Author(s):  
М.Н. Дроздов ◽  
Ю.Н. Дроздов ◽  
А.В. Новиков ◽  
П.А. Юнин ◽  
Д.В. Юрасов
Keyword(s):  
Mass Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
Depth Profiling ◽  
Depth Resolution ◽  
Ion Beams ◽  
Criterion A ◽  
Ion Mass Spectrometry ◽  
Low Energies ◽  
Elemental Depth ◽  
Secondary Ion

AbstractNew data concerning the influence of a probing beam of bismuth ions on the depth resolution in elemental depth profiling by secondary ion mass spectrometry (SIMS) have been obtained on a TOF.SIMS-5 system using the principle of two separate ion beams. It is established that the existing criterion of nondestructive character of the probing beam, on which this principle is based, is insufficient. Additional processes must be taken into account so as to formulate a more adequate criterion. A regime of depth profiling is proposed that allows the depth resolution to be improved at low energies of sputtering ions.

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