Optimization of the Crystal Surface Temperature Distribution in the Single-Crystal Growth Process by the Czochralski Method

2002 ◽  
Vol 177 (2) ◽  
pp. 284-312 ◽  
Author(s):  
Ja Hoon Jeong ◽  
In Seok Kang
2020 ◽  
Vol 1003 ◽  
pp. 247-253
Author(s):  
Zhi Xin Ma ◽  
Xiao Guo Bi ◽  
Xu Dong Liu ◽  
Xiao Dong Li ◽  
Ji Guang Li ◽  
...  

LYSO:Ce single crystal was widely manufactured by Czochralski method. Considering its high cost and the pollution of the crucible, we tried to prepare the crystal by Verneuil method. Unlike Czochralski method, the Verneuil method need the powders with excellent fluidity and high purity. By comparing the powders annealed at 1100°C,1200°C,1300°C,1400°C and 1500°C, we can obtained the needed powders at 1500°C. We also increased the content of silica to satisfy the volatilization in crystal growth process. The single crystal was prepared by changing the growth parameter. We investigated the phase and the microstructure of the powders and observed the microstucture of the crystal fracture. We discussed the improved method of the process of crystal growth.


2012 ◽  
Vol 7 (2) ◽  
pp. 379-386 ◽  
Author(s):  
Yoshio MASUDA ◽  
Akira SUZUKI ◽  
Tohru ISHIGURO ◽  
Chiaki YOKOYAMA

1990 ◽  
Vol 164-165 ◽  
pp. 177-186 ◽  
Author(s):  
K. Dembinski ◽  
M. Gervais ◽  
P. Odier ◽  
J.P. Coutures

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