Construction of Stochastic PDEs and Predictive Control of Surface Roughness in Thin Film Deposition

2006 ◽  
pp. 375-402
Author(s):  
D. Ni ◽  
P. D. Christofides
Keyword(s):  
Thin Film ◽  
Surface Roughness ◽  
Predictive Control ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Stochastic Pdes

Phenethylammonium bismuth halides: from single crystals to bulky-organic cation promoted thin-film deposition for potential optoelectronic applications

2019 ◽  
Vol 7 (36) ◽  
pp. 20733-20741 ◽  
Author(s):  
Mehri Ghasemi ◽  
Miaoqiang Lyu ◽  
Md Roknuzzaman ◽  
Jung-Ho Yun ◽  
Mengmeng Hao ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Roughness ◽  
Single Crystals ◽  
Organic Cation ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Optoelectronic Applications ◽  
Excellent Stability

The phenethylammonium cation significantly promotes the formation of fully-covered thin-films of hybrid bismuth organohalides with low surface roughness and excellent stability.

Low Surface Roughness GaAs/Si Thin-Film Deposition Using Three-Step Growth Method in MBE

2020 ◽  
Vol 1014 ◽  
pp. 43-51
Author(s):  
Wei Wang ◽  
Ben Ma ◽  
Han Chao Gao ◽  
Hai Long Yu ◽  
Zhong Hui Li
Keyword(s):  
Thin Film ◽  
Surface Roughness ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Semiconductor Layer ◽  
Material System ◽  
Epitaxial Gaas ◽  
Scanning Area ◽  
Growth Method ◽  
Step Growth

Epitaxial GaAs-on-Si is an ideal material system for studying the physics of mismatched heteroepitaxy of a polar semiconductor layer grown on a non-polar substrate like silicon. Understanding and optimization of the initial nucleation of GaAs on silicon is the most crucial step in the success of GaAs/Si heteroepitaxy. Molecular beam epitaxy (MBE) technique has been used to deposit hetero-epitaxial GaAs thin-film on off-angle Si (100) substrate using the three-step growth method. After optimizing the growth parameters of low temperature (LT) buffer layer and high temperature (HT) epilayer, XRD analyses were performed. Characterization results of the GaAs (004) films which were not subjected to annealing, show a full-width half maximum (FWHM) of 760.1 arc sec and a root mean square (RMS) surface roughness of lower than 1 nm for a scanning area of 10 μm × 10 μm.

Predictive control of surface mean slope and roughness in a thin film deposition process

2010 ◽  
Vol 65 (16) ◽  
pp. 4720-4731 ◽  
Author(s):  
Xinyu Zhang ◽  
Gangshi Hu ◽  
Gerassimos Orkoulas ◽  
Panagiotis D. Christofides
Keyword(s):  
Thin Film ◽  
Predictive Control ◽  
Thin Film Deposition ◽  
Deposition Process ◽  
Film Deposition

CaBi4Ti4O15 thin film deposition on electroplated Platinum substrates using a sol-gel method

2008 ◽  
Vol 1113 ◽  
Author(s):  
Takeyasu Saito ◽  
Yuichiro Hirota ◽  
Mariko Ooyanagi ◽  
Naoki Okamoto ◽  
Kazuo Kondo ◽  
...  
Keyword(s):  
Thin Film ◽  
Surface Roughness ◽  
Crystallization Temperature ◽  
Sol Gel ◽  
Void Formation ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Orientation Control ◽  
Gel Method ◽  
Sol Gel Method

ABSTRACTCaBi4Ti4O15 growth on different Platinum substrates was carried out through a sol-gel method. Higher crystallization temperature and 20% excess Bi decreased pyrochlore contents in the CaBi4Ti4O15 films. Repetition through coating, calcination and crystallization decreased void formation on the surface. C-axis oriented thin film could be grown on sputtered platinum substrates with low Pt (200) orientation. On electroplated Pt substrates, (119) oriented CaBi4Ti4O15 thin film was grown, suggesting surface roughness of Pt substrates is a crucial factor for orientation control of sol-gel derived CaBi4Ti4O15 thin film.

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