CaBi4Ti4O15 thin film deposition on electroplated Platinum substrates using a sol-gel method

2008 ◽  
Vol 1113 ◽  
Author(s):  
Takeyasu Saito ◽  
Yuichiro Hirota ◽  
Mariko Ooyanagi ◽  
Naoki Okamoto ◽  
Kazuo Kondo ◽  
...  

ABSTRACTCaBi4Ti4O15 growth on different Platinum substrates was carried out through a sol-gel method. Higher crystallization temperature and 20% excess Bi decreased pyrochlore contents in the CaBi4Ti4O15 films. Repetition through coating, calcination and crystallization decreased void formation on the surface. C-axis oriented thin film could be grown on sputtered platinum substrates with low Pt (200) orientation. On electroplated Pt substrates, (119) oriented CaBi4Ti4O15 thin film was grown, suggesting surface roughness of Pt substrates is a crucial factor for orientation control of sol-gel derived CaBi4Ti4O15 thin film.

2011 ◽  
Vol 320 ◽  
pp. 124-129
Author(s):  
Yung Kuan Tseng ◽  
Shih Chun Chien ◽  
Ming Hung Chuang ◽  
Chi Sheng Hsu ◽  
Yen Cheng Chen

The purpose of this study was to discuss the effects of different solvent systems for aluminum doped zinc oxide (AZO) thin film deposition by using the sol-gel method. In the conventional sol-gel method of producing AZO thin films, the solution selected as the precursor solvent was used ethylene glycol monomethylether (EGME), which in this study propylene glycol mono-methyl ether (PGME) was used. The precursor solution was observed by TGA/DSC to understand the variations while heating. The two prepared precursor solutions were then respectively spin coated onto substrates of boron silicate glass. XRD analysis indicated both showed significant c-axis preferred orientation. The surface morphology of the films was observed by FESEM, which showed that the thin film surface by PGME solvent was smoother and dense. A four-point probe was used to measure the electrical resistance of the thin films, which the measured results indicated that the thin film produced by PGME had lower resistivity than those produced by EGME. Resulting with a thin film electric resistance reaching as low as 3.474×10-3(W×cm). The visible light transparency was determined via UV-vis analysis. Results showed that the average transparency of thin films produced by the EGME solvent reached 95% and above, where the average transparency from PGME solvent still reached 90% and above. Experimental results demonstrated that PGME is a good option to synthesize AZO thin films.


2012 ◽  
Vol 519 ◽  
pp. 184-187
Author(s):  
Xuan Ding ◽  
Qing Ming Chen ◽  
Ji Ma ◽  
Mya Theingi ◽  
Ying Juan Li ◽  
...  

LaNiO3 single layer, LaNiO3/LaAlO3 superlattice on vicinal-cut single crystalline LaAlO3 (100) and LSAT (100) substrates were prepared by pulsed laser deposition technique. Single-phased LaNiO3 polycrystal target, which is synthesized by sol-gel method, is employed in the thin film deposition process. The structure and physical properties of both the targets and thin films are analyzed. X-ray diffraction results show LaNiO3 single layer is of c-orientation and textural growth, therefore LaNiO3/LaAlO3 forms not superlattice but multilayer. The ultra-violet LITV (laser induced thermoelectric voltage) effects of the LaNiO3/LaAlO3 mutilayer and LaNiO3 single layer were investigated. A comparison study of the influence of LaNiO3 targets prepared by different sol-gel method on the physical property, and LITV effect of thin films was performed as well.


Author(s):  
Dong XU ◽  
Qi SONG ◽  
Ke ZHANG ◽  
Hong-Xing XU ◽  
Yong-Tao YANG ◽  
...  
Keyword(s):  
Sol Gel ◽  

2019 ◽  
Vol 7 (36) ◽  
pp. 20733-20741 ◽  
Author(s):  
Mehri Ghasemi ◽  
Miaoqiang Lyu ◽  
Md Roknuzzaman ◽  
Jung-Ho Yun ◽  
Mengmeng Hao ◽  
...  

The phenethylammonium cation significantly promotes the formation of fully-covered thin-films of hybrid bismuth organohalides with low surface roughness and excellent stability.


2010 ◽  
Vol 55 (3) ◽  
pp. 385-393 ◽  
Author(s):  
Dayene M. Carvalho ◽  
Jorge L. B. Maciel ◽  
Leandro P. Ravaro ◽  
Rogério E. Garcia ◽  
Valdemir G. Ferreira ◽  
...  

2013 ◽  
Vol 62 (8) ◽  
pp. 1176-1182 ◽  
Author(s):  
Jong Hoon Lee ◽  
Chang Hoi Kim ◽  
Hong Seung Kim ◽  
Jae Hoon Park ◽  
Jin Hwa Ryu ◽  
...  

2001 ◽  
Vol 17 (12) ◽  
pp. 1112-1116
Author(s):  
Ma Jian-Hua ◽  
◽  
Wu Guang-Ming ◽  
Cheng Yin-Bing ◽  
Sun Qi ◽  
...  

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