Low Surface Roughness GaAs/Si Thin-Film Deposition Using Three-Step Growth Method in MBE

2020 ◽  
Vol 1014 ◽  
pp. 43-51
Author(s):  
Wei Wang ◽  
Ben Ma ◽  
Han Chao Gao ◽  
Hai Long Yu ◽  
Zhong Hui Li
Keyword(s):  
Thin Film ◽  
Surface Roughness ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Semiconductor Layer ◽  
Material System ◽  
Epitaxial Gaas ◽  
Scanning Area ◽  
Growth Method ◽  
Step Growth

Epitaxial GaAs-on-Si is an ideal material system for studying the physics of mismatched heteroepitaxy of a polar semiconductor layer grown on a non-polar substrate like silicon. Understanding and optimization of the initial nucleation of GaAs on silicon is the most crucial step in the success of GaAs/Si heteroepitaxy. Molecular beam epitaxy (MBE) technique has been used to deposit hetero-epitaxial GaAs thin-film on off-angle Si (100) substrate using the three-step growth method. After optimizing the growth parameters of low temperature (LT) buffer layer and high temperature (HT) epilayer, XRD analyses were performed. Characterization results of the GaAs (004) films which were not subjected to annealing, show a full-width half maximum (FWHM) of 760.1 arc sec and a root mean square (RMS) surface roughness of lower than 1 nm for a scanning area of 10 μm × 10 μm.

Phenethylammonium bismuth halides: from single crystals to bulky-organic cation promoted thin-film deposition for potential optoelectronic applications

2019 ◽  
Vol 7 (36) ◽  
pp. 20733-20741 ◽  
Author(s):  
Mehri Ghasemi ◽  
Miaoqiang Lyu ◽  
Md Roknuzzaman ◽  
Jung-Ho Yun ◽  
Mengmeng Hao ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Roughness ◽  
Single Crystals ◽  
Organic Cation ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Optoelectronic Applications ◽  
Excellent Stability

The phenethylammonium cation significantly promotes the formation of fully-covered thin-films of hybrid bismuth organohalides with low surface roughness and excellent stability.

CaBi4Ti4O15 thin film deposition on electroplated Platinum substrates using a sol-gel method

2008 ◽  
Vol 1113 ◽  
Author(s):  
Takeyasu Saito ◽  
Yuichiro Hirota ◽  
Mariko Ooyanagi ◽  
Naoki Okamoto ◽  
Kazuo Kondo ◽  
...  
Keyword(s):  
Thin Film ◽  
Surface Roughness ◽  
Crystallization Temperature ◽  
Sol Gel ◽  
Void Formation ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Orientation Control ◽  
Gel Method ◽  
Sol Gel Method

ABSTRACTCaBi4Ti4O15 growth on different Platinum substrates was carried out through a sol-gel method. Higher crystallization temperature and 20% excess Bi decreased pyrochlore contents in the CaBi4Ti4O15 films. Repetition through coating, calcination and crystallization decreased void formation on the surface. C-axis oriented thin film could be grown on sputtered platinum substrates with low Pt (200) orientation. On electroplated Pt substrates, (119) oriented CaBi4Ti4O15 thin film was grown, suggesting surface roughness of Pt substrates is a crucial factor for orientation control of sol-gel derived CaBi4Ti4O15 thin film.

scholarly journals A Study on the Wear Characteristics of Al7075 with Changes in Surface Roughness and Ti Thin Film Deposition Time

2020 ◽  
Vol 2020 ◽  
pp. 1-9
Author(s):  
Jihye An ◽  
Sunghoon Im ◽  
Haneul Kang ◽  
Hyunji Kim ◽  
Yunyoong Yoo ◽  
...  
Keyword(s):  
Thin Film ◽  
Surface Roughness ◽  
Wear Resistance ◽  
Extreme Environments ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Mechanical Parts ◽  
Materials Research ◽  
Predetermined Time ◽  
Representative Material

Mechanical parts have a problem of wear when used in extreme environments. Aluminum, most used in the industrial field, is a representative material of light weight, but its wear resistance is not good. To resolve the wear problem of such materials, research and development of surface thin film deposition technology has been increasing. Wear resistance was investigated after the Ti thin film was deposited by sputtering, one of the main methods of this technique. The smaller the surface roughness value and the thicker the thin film, the better the wear resistance. However, when a thin film is deposited for a predetermined time or less, the bonding strength with the base metal is lowered and the wear resistance is confirmed as low.

Highly oriented thin films of cubic zirconia on sapphire through grain growth seeding

1991 ◽  
Vol 6 (11) ◽  
pp. 2387-2392 ◽  
Author(s):  
K.T. Miller ◽  
F.F. Lange
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thin Film Deposition ◽  
Epitaxial Films ◽  
Film Deposition ◽  
Material System ◽  
Polycrystalline Thin Film ◽  
Process Step ◽  
Heat Treated ◽  
Deposition Techniques

A two-step process has been developed to form highly oriented thin films in material systems with dissimilar crystal structures and interatomic spacings. This processing method utilizes current polycrystalline thin film deposition techniques. In this method, a polycrystalline thin film is first deposited and heat treated to promote its breakup into isolated grains. The breakup process favors those grains that have a low substrate interfacial energy and so produces a film of highly oriented but isolated grains. In the second process step, another polycrystalline thin film is deposited. The remnant grains act as seeds for the growth of a highly oriented thin film. The process is demonstrated through the growth of highly (100) oriented thin films of cubic ZrO2 (25 mol % Y2O3) on (0001) Al2O3 single crystal substrates, a material system in which film and substrate have dissimilar structures and interatomic spacings. Implications for the growth of epitaxial films using this method are discussed.

Effects of Operating Conditions on Thin Film Deposition Performance in Air Atomizing Spray Pyrolysis

2010 ◽  
Author(s):  
Changxue Xu ◽  
Yong Huang ◽  
Yafu Lin
Keyword(s):  
Thin Film ◽  
Surface Roughness ◽  
Flow Rate ◽  
Liquid Flow ◽  
Liquid Flow Rate ◽  
Thin Film Deposition ◽  
Air Gap ◽  
Film Deposition ◽  
Operating Conditions ◽  
Air Pressure

Thin films have been finding more and more applications in electronics, optical devices, and energy conversion and storage devices, to name a few. As one of the most promising thin film deposition techniques, air atomizing spray pyrolysis, which uses compressed air to disrupt the liquid stream into droplets, has been favored in scientific and engineering communities. However, the effects of operating conditions such as liquid flow rate, atomizing air pressure, fan air pressure, and air gap on the geometric properties of deposited thin film are still not systematically studied. The objective of this study is to experimentally investigate the effects of air spraying operating conditions on the surface roughness and thickness of deposited zinc oxide (ZnO) thin film. It is found 1) The surface roughness increases with the liquid flow rate, but decreases with the atomizing air pressure, fan air pressure, and air gap; 2) The surface roughness decreases along both the X and Y directions under any given operating condition; 3) The thickness increases with the liquid flow rate and the atomizing air pressure, but decreases with the fan air pressure and the air gap; and 4) The thickness generally changes differently along the X and Y directions. Along the X direction, it decreases monotonically; however, along the Y direction, it increases first then decreases as in a saddle shape. While ZnO film deposition is studied, it is expected that the above conclusions may be applicable in air spraying other materials.

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