Defects in Monocrystalline Silicon

2006 ◽  
pp. 101-120 ◽  
Author(s):  
Wilfried Ammon
Keyword(s):  
Monocrystalline Silicon

scholarly journals Interlayer architecture for diffusion welding of monocrystalline silicon with copper

2020 ◽  
Vol 1713 ◽  
pp. 012009
Author(s):  
O A Barabanova ◽  
S V Nabatchikov ◽  
E Yu Zhukov
Keyword(s):  
Monocrystalline Silicon ◽  
Diffusion Welding

Experimental investigation into polishing of monocrystalline silicon wafer using double-disc chemical assisted magnetorheological finishing process

2021 ◽  
pp. 095440622098384
Author(s):  
Mayank Srivastava ◽  
Pulak M Pandey
Keyword(s):  
Surface Roughness ◽  
Silicon Wafer ◽  
Flow Rate ◽  
Silicon Wafers ◽  
Monocrystalline Silicon ◽  
Slurry Flow ◽  
Magnetorheological Finishing ◽  
Finishing Process ◽  
Process Factors ◽  
Slurry Flow Rate

In the present work, a novel hybrid finishing process that combines the two preferred methods in industries, namely, chemical-mechanical polishing (CMP) and magneto-rheological finishing (MRF), has been used to polish monocrystalline silicon wafers. The experiments were carried out on an indigenously developed double-disc chemical assisted magnetorheological finishing (DDCAMRF) experimental setup. The central composite design (CCD) was used to plan the experiments in order to estimate the effect of various process factors, namely polishing speed, slurry flow rate, percentage CIP concentration, and working gap on the surface roughness ([Formula: see text]) by DDCAMRF process. The analysis of variance was carried out to determine and analyze the contribution of significant factors affecting the surface roughness of polished silicon wafer. The statistical investigation revealed that percentage CIP concentration with a contribution of 30.6% has the maximum influence on the process performance followed by working gap (21.4%), slurry flow rate (14.4%), and polishing speed (1.65%). The surface roughness of polished silicon wafers was measured by the 3 D optical profilometer. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) were carried out to understand the surface morphology of polished silicon wafer. It was found that the surface roughness of silicon wafer improved with the increase in polishing speed and slurry flow rate, whereas it was deteriorated with the increase in percentage CIP concentration and working gap.

Picosecond laser structuring of monocrystalline silicon surface

2013 ◽  
Author(s):  
Igor Guk ◽  
Galina Shandybina ◽  
Eugeny Yakovlev ◽  
Leonid Golovan
Keyword(s):  
Silicon Surface ◽  
Picosecond Laser ◽  
Monocrystalline Silicon ◽  
Laser Structuring

Thin-film monocrystalline-silicon solar cells made by a seed layer approach on glass-ceramic substrates

2010 ◽  
Vol 94 (2) ◽  
pp. 381-385 ◽  
Author(s):  
I. Gordon ◽  
S. Vallon ◽  
A. Mayolet ◽  
G. Beaucarne ◽  
J. Poortmans
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Glass Ceramic ◽  
Seed Layer ◽  
Monocrystalline Silicon ◽  
Silicon Solar Cells ◽  
Ceramic Substrates

Investigation on the sawing temperature in ultrasonic vibration assisted diamond wire sawing monocrystalline silicon

2021 ◽  
Vol 135 ◽  
pp. 106070
Author(s):  
Yan Wang ◽  
Li-Xing Song ◽  
Jian-Guo Liu ◽  
Rui Wang ◽  
Bo-Cheng Zhao
Keyword(s):  
Ultrasonic Vibration ◽  
Monocrystalline Silicon ◽  
Diamond Wire ◽  
Diamond Wire Sawing

A comparison of the reaction of titanium with amorphous and monocrystalline silicon

1990 ◽  
Vol 67 (10) ◽  
pp. 6255-6264 ◽  
Author(s):  
Ivo J. M. M. Raaijmakers ◽  
Ki‐Bum Kim
Keyword(s):  
Monocrystalline Silicon
Sign in / Sign up

Export Citation Format

Share Document