Shift Analysis and the Incidence of Protection

Author(s):  
David Greenaway ◽  
Chris Milner
Keyword(s):  
1975 ◽  
Vol 38 (9) ◽  
pp. 1099-1141 ◽  
Author(s):  
J E Bowcock ◽  
H Burkhardt

2008 ◽  
Vol 22 (13) ◽  
pp. 1357-1366 ◽  
Author(s):  
M. REZAEE ROKN-ABADI ◽  
H. ARABSHAHI ◽  
M. R. BENAM

Temperature and doping dependencies of electron mobility in SiC and GaN structures have been calculated using an iteravive technique. The following scattering mechanisims, i.e. impurity, polar optical phonon, acoustic phonon, piezoelectric and electron–plasmon are included in the calculation. Ionized imurity scattering has been treated beyond the Born approximation using the phase-shift analysis. It is found that the electron mobility decreases monotonically as the temperature increases from 100 K to 600 K. The low temperature value of electron mobilty increases significantly with increasing doping concentration. The iterative results are in fair agreement with other recent calculations obtained using the relaxation-time approximation and experimental methods.


1970 ◽  
Vol 20 (2) ◽  
pp. 301-319 ◽  
Author(s):  
G. Giacomelli ◽  
P. Lugaresi-Serra ◽  
G. Mandrioli ◽  
A.M. Rossi ◽  
F. Griffiths ◽  
...  

1973 ◽  
Vol 44 (1) ◽  
pp. 1-4 ◽  
Author(s):  
R. Vinh Mau ◽  
J.M. Richard ◽  
B. Loiseau ◽  
M. Lacombe ◽  
W.N. Cottingham

2017 ◽  
Vol 26 (5) ◽  
pp. 1399-1405 ◽  
Author(s):  
Ajay C. Kanakamedala ◽  
Jeremy M. Burnham ◽  
Thomas R. Pfeiffer ◽  
Elmar Herbst ◽  
Marcin Kowalczuk ◽  
...  

1963 ◽  
Vol 129 (5) ◽  
pp. 2311-2322 ◽  
Author(s):  
Olav T. Vik ◽  
Hugo R. Rugge

1989 ◽  
Vol 48 (6) ◽  
pp. 517-520 ◽  
Author(s):  
E. Aktulga ◽  
C. Zaim Çil ◽  
G. Aktaş

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