Small Area X-ray Diffraction Techniques; Errors in Strain Measurement

1988 ◽  
pp. 77-85 ◽  
Author(s):  
Thomas L. Nunes ◽  
Charles C. Goldsmith
1983 ◽  
Vol 27 ◽  
pp. 229-238
Author(s):  
C.C. Goldsmith ◽  
G.A. Walker

AbstractThe trend towards smaller devices and packages in the semiconductor industry makes it increasingly important and increasingly difficult to obtain useful X-ray diffraction information from the small areas employed. This study covers applications of a Rigaku micro-diffractometer to measure strain and obtain phase information from areas less than 100μm in diameter. Examples of residual stress mappings between electrical vias only 100μm apart and phase determination on a single electrical via 120μm diameter will be shown.


1949 ◽  
Vol 1 (3) ◽  
pp. 211-224
Author(s):  
G. B. Greenough

SummaryMany papers have been written on the measurement of strain by X-ray diffraction methods and on the interpretation of these strains in terms of stresses. Whereas, during the past few years, the experimental methods of determining the strains have. remained largely unchanged, research has shown that the older techniques for calculating stresses from strains are not always valid.In this paper an attempt is made to describe some of the principles of strain measurement by X-ray diffraction methods to those who are unfamiliar with the methods. The types of stress and strain systems which may exist in polycrystalline metals are then considered, particular attention being paid to the effect of the elastic and plastic anisotropy of the individual crystals. Some indication is given as to how the earlier methods of interpreting X-ray strain measurements should be modified, but no rigid routine method is proposed for use in a general case.


1987 ◽  
Vol 31 ◽  
pp. 77-85
Author(s):  
Thomas L. Nunes ◽  
Charles C. Goldsmith

AbstractThe semiconductor industry is continually striving'for smaller, denser devices. Microdiffractometry is an analytical technique which endeavors to apply x-ray diffraction techniques for measuring strain and phase information to areas approaching 50 micrometers diameter or less.This study extends the work of Goldsmith and Walker in the measurement of strain using the lattice distortion or sin2(ψ) plot method.The systematic errors arising from both sample and beam displacement relative to the center of rotation of the cample ie examined. A relationship is derived which predicts the influence of these displacements upon the slope of a stress plot. The predictions are compared to experiment.The influence of random errors arising from particle size and photon counting statistics will also be discussed. Guidelines will be presented which will minimize both systematic and random errors.


Strain ◽  
2017 ◽  
Vol 53 (2) ◽  
pp. e12221 ◽  
Author(s):  
M. Mostafavi ◽  
D. M. Collins ◽  
M. J. Peel ◽  
C. Reinhard ◽  
S. M. Barhli ◽  
...  

2020 ◽  
Vol 52 (12) ◽  
pp. 890-894
Author(s):  
Jörg M. Stockmann ◽  
Jörg Radnik ◽  
Sebastian Bütefisch ◽  
Ingo Busch ◽  
Thomas Weimann ◽  
...  
Keyword(s):  
X Ray ◽  

1986 ◽  
Vol 13 (4) ◽  
pp. 187-194
Author(s):  
Yasuo KANAZAWA ◽  
Hiromoto NAKAZAWA
Keyword(s):  
X Ray ◽  

1993 ◽  
Vol 37 ◽  
pp. 219-227
Author(s):  
M.A. Zaitz

AbstractThin film technology has become an integral part of semiconductor multichip ceramic packages. Characterizing the thickness of multimetal multilayer thin film structures that combine both thin and thick films is an important parameter for manufacturing process control and development. Accuracies in the range of 3-5% and precisions of 1.3% were attained on multilayer metal films ranging from a few hundred angstroms to tens of thousands of angstroms.


2017 ◽  
Vol 367 ◽  
pp. 80-89 ◽  
Author(s):  
Matthew P.B. Glazer ◽  
Junjie Wang ◽  
Jiung Cho ◽  
Jonathan D. Almer ◽  
John S. Okasinski ◽  
...  

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