Grain Boundary Motion During Anisotropic Grain Growth

1994 ◽  
pp. 145-149
Author(s):  
A. Brokman ◽  
A. J. Vilenkin
Keyword(s):  
Grain Boundary ◽  
Grain Growth ◽  
Boundary Motion ◽  
Grain Boundary Motion

Grain boundary motion and grain growth in zinc in a high magnetic field

2013 ◽  
Vol 49 (11) ◽  
pp. 3875-3884 ◽  
Author(s):  
Dmitri A. Molodov ◽  
Christoph Günster ◽  
Günter Gottstein
Keyword(s):  
Magnetic Field ◽  
Grain Boundary ◽  
Grain Growth ◽  
High Magnetic Field ◽  
Boundary Motion ◽  
Grain Boundary Motion

Grain Growth Kinetics in Microcrystalline Materials

1994 ◽  
Vol 343 ◽  
Author(s):  
V. G. Sursaeva
Keyword(s):  
Activation Energy ◽  
Grain Boundary ◽  
Grain Growth ◽  
Dark Field ◽  
Boundary Mobility ◽  
Boundary Motion ◽  
Grain Boundary Mobility ◽  
Grain Growth Kinetics ◽  
Microcrystalline Materials ◽  
Grain Boundary Motion

ABSTRACTCertain experimental results are presented concerning grain growth in microcrystalline Ag films. Dark field TEM technique was used for the measurement of grain size, trijunction velocity and grain boundary mobility. We found that the activation energy for trijunction motion is 25.0 kJ/g.atom, and the activation energy for the grain boundary motion is 50.0 kJ/g.atom.

Effect of Triple Junctions on Grain Boundary and Grain Growth Kinetics in Aluminium - 10 ppm Magnesium Sheet

2004 ◽  
Vol 467-470 ◽  
pp. 777-782 ◽  
Author(s):  
D. Mattissen ◽  
D. Kirch ◽  
Dmitri A. Molodov ◽  
Lasar S. Shvindlerman ◽  
Günter Gottstein
Keyword(s):  
Grain Boundary ◽  
Grain Growth ◽  
Boundary Motion ◽  
Triple Junctions ◽  
Marked Influence ◽  
Von Neumann ◽  
Grain Growth Kinetics ◽  
Grain Boundary Motion ◽  
Unique Relationship

The motion and geometry of connected grain boundary systems with triple junctions in aluminium -10 ppm magnesium was investigated in-situ with a special designed SEM heating stage. The results show that triple junctions can have a marked influence on grain boundary motion. The grain area change with annealing time was from a hot stage in the SEM. An analysis of the experimental data reveals that there is no unique relationship between growth rate and the number n of grain sides (Von Neumann-Mullins relation). This is attributed to the effect of triple junction drag on grain growth.

Stress Assisted Grain Growth in Ultrafine and Nanocrystalline Aluminum Revealed by in-situ TEM

2008 ◽  
Vol 1086 ◽  
Author(s):  
Frederic Mompiou ◽  
Marc Legros ◽  
Daniel Caillard
Keyword(s):  
Grain Boundary ◽  
Grain Growth ◽  
Dislocation Motion ◽  
In Situ Tem ◽  
Boundary Motion ◽  
Fine Grain ◽  
Nanocrystalline Aluminum ◽  
Grain Boundary Motion

AbstractIn-situ straining experiments on nanocrystalline (nc) and ultra fine grain (UFG) Aluminum were performed at room and intermediate temperatures. Both materials exhibit significant stress assisted grain growth. The strain induced by grain boundary motion has been measured in UFG Al, and was found to be on the order of a few percents. These results cannot be interpreted solely within the framework of Displacement Shift Complete (DSC) dislocation motion. We propose here that GB motion occurs via both shuffling and secondary DSC dislocation motion.

Kinetic Modeling of Grain Growth in Polycrystalline Silicon Films Doped with Phosphorus and Boron

1987 ◽  
Vol 106 ◽  
Author(s):  
H.-J. Kim ◽  
C. V. Thompson
Keyword(s):  
Grain Boundary ◽  
Grain Growth ◽  
Polycrystalline Silicon ◽  
Vacancy Concentration ◽  
Silicon Films ◽  
Boundary Motion ◽  
Diffusive Process ◽  
Polycrystalline Silicon Films ◽  
Diffusive Processes ◽  
Grain Boundary Motion

ABSTRACTIn previous work it has been shown that doping of silicon with P or As leads to enhanced rates of grain growth while doping with B has little effect, except in compensation of the effect of P or As. Here we report a detailed study of the effects of P doping on normal grain growth in silicon films. We also outline a kinetic model for grain growth which is consistent with the various observed effects of dopants. This model is based on the assumption that dopants primarily affect grain boundary mobilities and that grain boundary motion occurs through parallel diffusive and non-diffusive processes. It is further assumed that the rate of the diffusive process is proportional to the vacancy concentration which is a known function of the electron concentration.

Coupled grain boundary motion in a nanocrystalline grain boundary network

2011 ◽  
Vol 65 (2) ◽  
pp. 151-154 ◽  
Author(s):  
M. Velasco ◽  
H. Van Swygenhoven ◽  
C. Brandl
Keyword(s):  
Grain Boundary ◽  
Boundary Motion ◽  
Grain Boundary Motion

Motion of Crystal/Crystal and Crystal/Amorphous Interfaces

1990 ◽  
Vol 183 ◽  
Author(s):  
J. L. Batstone
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Temperature ◽  
Grain Boundary ◽  
Boundary Motion ◽  
High Temperature Annealing ◽  
Thermally Activated ◽  
Transmission Electron ◽  
Grain Boundary Motion

AbstractMotion of ordered twin/matrix interfaces in films of silicon on sapphire occurs during high temperature annealing. This process is shown to be thermally activated and is analogous to grain boundary motion. Motion of amorphous/crystalline interfaces occurs during recrystallization of CoSi2 and NiSi2 from the amorphous phase. In-situ transmission electron microscopy has revealed details of the growth kinetics and interfacial roughness.

Grain boundary motion in particulate material

2020 ◽  
pp. 541-544
Author(s):  
J.L. Turner ◽  
M. Nakagawa ◽  
M.T. Lusk
Keyword(s):  
Grain Boundary ◽  
Particulate Material ◽  
Boundary Motion ◽  
Grain Boundary Motion

Grain Boundary Migration and Compensation Effect

2007 ◽  
Vol 550 ◽  
pp. 387-392
Author(s):  
Pavel Lejček
Keyword(s):  
Grain Boundary ◽  
Grain Boundaries ◽  
Compensation Effect ◽  
Activation Enthalpy ◽  
Boundary Migration ◽  
Grain Boundary Migration ◽  
Boundary Motion ◽  
Exponential Factor ◽  
Grain Boundary Motion

Anisotropy of grain boundary motion in a Fe–6at.%Si alloy is represented by a spectrum of values of the activation enthalpy of migration and the pre-exponential factor, depending on the orientation of individual grain boundaries. The general plot of these values exhibits a pronounced linear interdependence called the compensation effect. It is shown that changes of these values, caused by changes of intensive variables, are thermodynamically consistent.

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