Light Scattering by Plasmons in Heavily Doped n-Type Ge and Si

1985 ◽  
pp. 1113-1116
Author(s):  
N. Mestres ◽  
F. Cerdeira ◽  
M. Cardona
Keyword(s):  
Light Scattering ◽  
Heavily Doped

scholarly journals Влияние способа сильного легирования на композиционную однородность и оптические свойства монокристаллов LiNbO-=SUB=-3-=/SUB=- : Mg

2022 ◽  
Vol 130 (1) ◽  
pp. 184
Author(s):  
Н.В. Сидоров ◽  
Н.А. Теплякова ◽  
М.Н. Палатников
Keyword(s):  
Raman Spectroscopy ◽  
Light Scattering ◽  
Threshold Value ◽  
Magnesium Concentration ◽  
Direct Addition ◽  
Photoinduced Light Scattering ◽  
Heavily Doped ◽  
A Charge ◽  
Laser Conoscopy ◽  
Spectroscopy Laser

Raman spectroscopy, laser conoscopy and photoinduced light scattering methods have been applied to comparatively study composition uniformity of strongly doped LiNbO3 crystals with a magnesium concentration close to a threshold value ≈5 mol% MgО, grown from a charge synthesized using precursor Nb2O5:Mg (homogeneous doping method) and at direct addition of magnesium to the melt (direct doping method). It has been shown that application of homogeneous doping method allows one to obtain compositionally more homogeneous heavily doped LiNbO3:Mg crystal than direct melt doping method.

Inelastic light scattering from heavily doped and highly compensated GaAs:Si

1986 ◽  
Vol 59 (7) ◽  
pp. 2382-2386 ◽  
Author(s):  
T. Kamijoh ◽  
A. Hashimoto ◽  
H. Takano ◽  
M. Sakuta
Keyword(s):  
Light Scattering ◽  
Inelastic Light Scattering ◽  
Heavily Doped

Single particle electron light scattering in heavily doped semiconductors

1981 ◽  
Vol 10 (1) ◽  
pp. 221-223 ◽  
Author(s):  
I. P. Ipatova ◽  
A. V. Subashiev ◽  
V. A. Voitenko
Keyword(s):  
Light Scattering ◽  
Single Particle ◽  
Doped Semiconductors ◽  
Heavily Doped

Defects in Heavily-Doped MBE GaAs

1982 ◽  
Vol 40 ◽  
pp. 442-445
Author(s):  
C.B. Carter ◽  
D.M. DeSimone ◽  
T. Griem ◽  
C.E.C. Wood
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Heavily Doped

Molecular-beam epitaxy (MBE) is potentially an extremely valuable tool for growing III-V compounds. The value of the technique results partly from the ease with which controlled layers of precisely determined composition can be grown, and partly from the ability that it provides for growing accurately doped layers.

Collision induced hyper-Rayleigh light scattering in CCl4

1996 ◽  
Vol 88 (3) ◽  
pp. 683-691 ◽  
Author(s):  
P. KAATZ ◽  
D.P. SHELTON
Keyword(s):  
Light Scattering ◽  
Rayleigh Light Scattering ◽  
Rayleigh Light
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