Ion Implantation and Radiation Damage in Vanadium

1973 ◽  
pp. 465-476 ◽  
Author(s):  
G. Linker ◽  
M. Gettings ◽  
O. Meyer
Keyword(s):  
Ion Implantation ◽  
Radiation Damage

Amorphous Fe-B alloys produced by ion implantation. II. Low-temperature radiation damage

1985 ◽  
Vol 15 (6) ◽  
pp. 1237-1247 ◽  
Author(s):  
A Audouard ◽  
A Benyagoub ◽  
L Thome ◽  
J Chaumont
Keyword(s):  
Low Temperature ◽  
Ion Implantation ◽  
Radiation Damage ◽  
Temperature Radiation

scholarly journals Neutron-enhanced annealing of radiation damage formed by self-ion implantation in silicon

2006 ◽  
Vol 88 (24) ◽  
pp. 241921 ◽  
Author(s):  
A. Kinomura ◽  
A. Chayahara ◽  
Y. Mokuno ◽  
N. Tsubouchi ◽  
Y. Horino ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Radiation Damage

scholarly journals Study of the radiation damage caused by ion implantation in ZnO and its relation to magnetism

2019 ◽  
Vol 455 ◽  
pp. 7-12 ◽  
Author(s):  
Miaomiao Yuan ◽  
Xia Zhang ◽  
Ahmad M.A. Saeedi ◽  
Wei Cheng ◽  
Chungang Guo ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Radiation Damage

Surface evolution and radiation damage of a zirconolite glass-ceramic by Au ion implantation

2019 ◽  
Vol 478 ◽  
pp. 373-382 ◽  
Author(s):  
Tao Wei ◽  
Yingjie Zhang ◽  
Alan Xu ◽  
Daniel J. Gregg ◽  
Inna Karatchevtseva ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Radiation Damage ◽  
Glass Ceramic ◽  
Surface Evolution

The Effect of Photoexcitation on Formation of Radiation Defects in Si

1990 ◽  
Vol 201 ◽  
Author(s):  
V. N. Mordkovich ◽  
A. B. Danilin ◽  
Yu. N. Erokhin ◽  
S. N. Boldyrev
Keyword(s):  
Ion Implantation ◽  
Radiation Damage ◽  
Radiation Defect ◽  
Damage Accumulation ◽  
Defect Formation ◽  
Charge Carriers ◽  
Light Illumination ◽  
Radiation Defects ◽  
Electronic Subsystem ◽  
Nonequilibrium Electron

AbstractPhotoexcitation of the Si electronic subsystem during ion implantation was found to be able to control radiation damage accumulation. Conditions when additional light illumination during ion bombardment suppresses radiation defect formation are determined. The model of effect observed taking into account recombination of nonequilibrium electron and holes is proposed. Coefficient between the change in amount of damage accumulated and the rate of nonequilibrium charge carriers generation is estimated.

Radiation Damage in Epitaxial CaF2Films on Si Substrates by Ar+Ion Implantation

1983 ◽  
Vol 22 (Part 2, No. 7) ◽  
pp. L458-L460 ◽  
Author(s):  
Hiroshi Ishiwara ◽  
Kouzo Orihara ◽  
Tanemasa Asano
Keyword(s):  
Ion Implantation ◽  
Radiation Damage ◽  
Si Substrates
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