Electron Scattering by Laser Excited Atoms in Well Defined States

1975 ◽  
pp. 381-396
Author(s):  
I. V. Hertel
Keyword(s):  
Electron Scattering ◽  
Excited Atoms

Theory of electron scattering from laser excited atoms

1974 ◽  
Vol 7 (16) ◽  
pp. 2173-2188 ◽  
Author(s):  
J Macek ◽  
I V Hertel
Keyword(s):  
Electron Scattering ◽  
Excited Atoms

Electron scattering from laser excited atoms

2000 ◽  
Author(s):  
P. J. O. Teubner
Keyword(s):  
Electron Scattering ◽  
Excited Atoms

Inelastic electron scattering by laser-excited atoms

1997 ◽  
Vol 30 (22) ◽  
pp. 5317-5339 ◽  
Author(s):  
P W Zetner ◽  
S Trajmar ◽  
S Wang ◽  
I Kanik ◽  
G Csanak ◽  
...  
Keyword(s):  
Electron Scattering ◽  
Inelastic Electron ◽  
Excited Atoms ◽  
Inelastic Electron Scattering

scholarly journals Elastic electron scattering by laser-excited atoms

1998 ◽  
Vol 31 (8) ◽  
pp. L393-L400 ◽  
Author(s):  
S Trajmar ◽  
I Kanik ◽  
M A Khakoo ◽  
L R LeClair ◽  
I Bray ◽  
...  
Keyword(s):  
Electron Scattering ◽  
Elastic Electron ◽  
Elastic Electron Scattering ◽  
Excited Atoms

Study of charge transfer in FeTi

1983 ◽  
Vol 41 ◽  
pp. 296-297
Author(s):  
J. Taft∅
Keyword(s):  
Charge Transfer ◽  
Charge Distribution ◽  
Electron Scattering ◽  
Periodic System ◽  
Electron Distribution ◽  
Scattering Amplitude ◽  
Transition Elements ◽  
Hartree Fock ◽  
Cscl Structure ◽  
The Right

It is well known that for reflections corresponding to large interplanar spacings (i.e., sin θ/λ small), the electron scattering amplitude, f, is sensitive to the ionicity and to the charge distribution around the atoms. We have used this in order to obtain information about the charge distribution in FeTi, which is a candidate for storage of hydrogen. Our goal is to study the changes in electron distribution in the presence of hydrogen, and also the ionicity of hydrogen in metals, but so far our study has been limited to pure FeTi. FeTi has the CsCl structure and thus Fe and Ti scatter with a phase difference of π into the 100-ref lections. Because Fe (Z = 26) is higher in the periodic system than Ti (Z = 22), an immediate “guess” would be that Fe has a larger scattering amplitude than Ti. However, relativistic Hartree-Fock calculations show that the opposite is the case for the 100-reflection. An explanation for this may be sought in the stronger localization of the d-electrons of the first row transition elements when moving to the right in the periodic table. The tabulated difference between fTi (100) and ffe (100) is small, however, and based on the values of the scattering amplitude for isolated atoms, the kinematical intensity of the 100-reflection is only 5.10-4 of the intensity of the 200-reflection.

Lithography below 100 nm

1983 ◽  
Vol 41 ◽  
pp. 96-99
Author(s):  
L. D. Jackel
Keyword(s):  
Spatial Distribution ◽  
Electron Beam ◽  
Electron Scattering ◽  
Electron Beam Lithography ◽  
Substrate Material ◽  
Local Electron ◽  
Electron Dose ◽  
Positive Resist ◽  
Exposure Process

Most production electron beam lithography systems can pattern minimum features a few tenths of a micron across. Linewidth in these systems is usually limited by the quality of the exposing beam and by electron scattering in the resist and substrate. By using a smaller spot along with exposure techniques that minimize scattering and its effects, laboratory e-beam lithography systems can now make features hundredths of a micron wide on standard substrate material. This talk will outline sane of these high- resolution e-beam lithography techniques.We first consider parameters of the exposure process that limit resolution in organic resists. For concreteness suppose that we have a “positive” resist in which exposing electrons break bonds in the resist molecules thus increasing the exposed resist's solubility in a developer. Ihe attainable resolution is obviously limited by the overall width of the exposing beam, but the spatial distribution of the beam intensity, the beam “profile” , also contributes to the resolution. Depending on the local electron dose, more or less resist bonds are broken resulting in slower or faster dissolution in the developer.

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