Grain-Boundary and Free-Surface Induced Thermodynamic Melting: A Molecular Dynamics Study in Silicon

1989 ◽  
pp. 295-301 ◽  
Author(s):  
S. R. Phillpot ◽  
J. F. Lutsko ◽  
D. Wolf ◽  
S. Yip
Keyword(s):  
Molecular Dynamics ◽  
Free Surface ◽  
Grain Boundary

Effects of Alloying Elements on Iron Grain Boundary Cohesion

1997 ◽  
Vol 492 ◽  
Author(s):  
X. Chen ◽  
D. E. Ellis ◽  
G. B. Olson
Keyword(s):  
Molecular Dynamics ◽  
Free Surface ◽  
Grain Boundary ◽  
Grain Boundaries ◽  
First Principles ◽  
Electronic Structure Calculations ◽  
Alloying Elements ◽  
Alloying Element ◽  
Long Time ◽  
Structure Calculations

For a long time, understanding the mechanisms of impurity-promoted embrittlement in iron and the consequent cohesion(decohesion) effects has been a challenge for materials scientists. The role alloying elements play in impurity-promoted embrittlement is important due to either their direct intergranular cohesion(decohesion) effects or effects upon embrittling potency of other impurities. Some alloying elements like Pd and Mo are known to be helpful for intergranular cohesion in iron and some other alloying elements like Mn are known to segregate to and weaken iron grain boundaries dramatically[1]. There have been intensive investigations on these mechanisms for a long time and especially, with the progress in computing techniques in recent years, calculations on more realistic models have become possible[2–4]. In this paper we briefly present our studies on some selected alloying-element/iron grain boundaries(GB) and free surface(FS) systems. The effects of Pd, Mo, Mn and Cr on the Fe Σ5 (031) grain boundary and its corresponding (031) free surface are examined, using a combination of molecular dynamics(MD) and first-principles electronic structure calculations. Section 2 gives a brief introduction to the methods used and Section 3 gives the main results.

On the role of tin underlays for the prevention of thermal grooving in thin gold films

1986 ◽  
Vol 44 ◽  
pp. 732-733
Author(s):  
Jin Young Kim ◽  
R. E. Hummel ◽  
R. T. DeHoff
Keyword(s):  
Thin Film ◽  
Free Surface ◽  
Grain Boundary ◽  
Beneficial Effect ◽  
Failure Mechanism ◽  
Failure Mechanisms ◽  
Distinct Advantage ◽  
Gold Films ◽  
Gold Thin Film

Gold thin film metallizations in microelectronic circuits have a distinct advantage over those consisting of aluminum because they are less susceptible to electromigration. When electromigration is no longer the principal failure mechanism, other failure mechanisms caused by d.c. stressing might become important. In gold thin-film metallizations, grain boundary grooving is the principal failure mechanism.Previous studies have shown that grain boundary grooving in gold films can be prevented by an indium underlay between the substrate and gold. The beneficial effect of the In/Au composite film is mainly due to roughening of the surface of the gold films, redistribution of indium on the gold films and formation of In2O3 on the free surface and along the grain boundaries of the gold films during air annealing.

Atomic Mechanisms of Grain Boundary Motion

2005 ◽  
Vol 502 ◽  
pp. 157-162 ◽  
Author(s):  
A. Suzuki ◽  
Yuri M. Mishin
Keyword(s):  
Molecular Dynamics ◽  
Grain Boundary ◽  
Geometric Model ◽  
Lattice Rotation ◽  
Shear Stresses ◽  
Translation Rate ◽  
Embedded Atom ◽  
Local Lattice ◽  
Symmetrical Tilt ◽  
Grain Boundary Motion

We present results of atomistic computer simulations of spontaneous and stress-induced grain boundary (GB) migration in copper. Several symmetrical tilt GBs have been studied using the embedded-atom method and molecular dynamics. The GBs are observed to spontaneously migrate in a random manner. This spontaneous GB motion is always accompanied by relative translations of the grains parallel to the GB plane. Furthermore, external shear stresses applied parallel to the GB and normal to the tilt axis induce GB migration. Strong coupling is observed between the normal GB velocity vn and the grain translation rate v||. The mechanism of GB motion is established to be local lattice rotation within the GB core that does not involve any GB diffusion or sliding. The coupling constant between vn and v|| predicted within a simple geometric model accurately matches the molecular dynamics observations.

Molecular dynamics simulation of crack propagation behaviors at the Ni/Ni3Al grain boundary

RSC Advances ◽  
2014 ◽  
Vol 4 (62) ◽  
pp. 32749 ◽  
Author(s):  
Jingui Yu ◽  
Qiaoxin Zhang ◽  
Rong Liu ◽  
Zhufeng Yue ◽  
Mingkai Tang ◽  
...  
Keyword(s):  
Molecular Dynamics ◽  
Molecular Dynamics Simulation ◽  
Grain Boundary ◽  
Crack Propagation ◽  
Dynamics Simulation

Structural and Mechanical Properties of Nanophase Ni: A Molecular-Dynamics Study of the Influence of Grain-Boundary Structure on Elastic and Plastic Behavior

1997 ◽  
Vol 492 ◽  
Author(s):  
H. Van Swygenhoven ◽  
M. Spaczér ◽  
A. Caro
Keyword(s):  
Molecular Dynamics ◽  
Grain Boundary ◽  
Grain Boundaries ◽  
Diffusion Mechanism ◽  
Distribution Functions ◽  
Boundary Structure ◽  
Plastic Behavior ◽  
Self Diffusion ◽  
Common Neighbour ◽  
Grain Boundary Structure

ABSTRACTMolecular dynamics computer simulations of high load plastic deformation at temperatures up to 500K of Ni nanophase samples with mean grain size of 5 nm are reported. Two types of samples are considered: a polycrystal nucleated from different seeds, each having random location and random orientation, representing a sample with mainly high angle grain boundaries, and polycrystals with seeds located at the same places as before, but with a limited missorientation representing samples with mainly low angle grain boundaries. The structure of the grain boundaries is studied by means of pair distribution functions, coordination number, atom energetics, and common neighbour analysis. Plastic behaviour is interpreted in terms of grain-boundary viscosity, controlled by a self diffusion mechanism at the disordered interface activated by thermal energy and stress.

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