Electronic Properties of Quantum Dots and Modulated Quantum Wires

1990 ◽  
pp. 41-50
Author(s):  
J. A. Brum ◽  
G. Bastard
Keyword(s):  
Quantum Dots ◽  
Electronic Properties ◽  
Quantum Wires

scholarly journals Electronic properties of quantum dots formed by magnetic double barriers in quantum wires

2011 ◽  
Vol 84 (3) ◽  
Author(s):  
Hengyi Xu ◽  
T. Heinzel ◽  
I. V. Zozoulenko
Keyword(s):  
Quantum Dots ◽  
Electronic Properties ◽  
Quantum Wires

scholarly journals Electronic properties and quasi-zero-energy states of graphene quantum dots

2021 ◽  
Vol 103 (23) ◽  
Author(s):  
H. V. Grushevskaya ◽  
G. G. Krylov ◽  
S. P. Kruchinin ◽  
B. Vlahovic ◽  
Stefano Bellucci
Keyword(s):  
Quantum Dots ◽  
Electronic Properties ◽  
Graphene Quantum Dots ◽  
Zero Energy ◽  
Energy States

Effect of doping on the opto-electronic properties of hollow spheroid ZnO quantum dots: A theoretical study

2021 ◽  
Vol 270 ◽  
pp. 115220
Author(s):  
Sankarasubramanian Gopalakrishnan ◽  
Ramasamy Shankar ◽  
Ponmalai Kolandaivel
Keyword(s):  
Quantum Dots ◽  
Electronic Properties ◽  
Theoretical Study ◽  
Zno Quantum Dots ◽  
Effect Of Doping

Interaction of a conjugated polyaromatic molecule with a single dangling bond quantum dot on a hydrogenated semiconductor

2016 ◽  
Vol 18 (5) ◽  
pp. 3854-3861 ◽  
Author(s):  
Szymon Godlewski ◽  
Marek Kolmer ◽  
Mads Engelund ◽  
Hiroyo Kawai ◽  
Rafal Zuzak ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Electronic Properties ◽  
Dangling Bond

Starphene molecules are weakly attached to single dangling bond quantum dots, retaining the unperturbed originally designed electronic properties.

scholarly journals Electronic properties and third-order optical nonlinearities in tetragonal chalcopyrite AgInS2, AgInS2/ZnS and cubic spinel AgIn5S8, AgIn5S8/ZnS quantum dots

2017 ◽  
Vol 5 (1) ◽  
pp. 149-158 ◽  
Author(s):  
Bartłomiej Cichy ◽  
Dominika Wawrzynczyk ◽  
Marek Samoc ◽  
Wiesław Stręk
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Electronic Properties ◽  
Nonlinear Optical ◽  
Nonlinear Optical Properties ◽  
Optical Nonlinearities ◽  
Third Order

Electronic as well as third-order nonlinear optical properties of chalcopyrite AgInS2 and non-stoichiometric spinel AgIn5S8 quantum dots compared with corresponding Zn2+ alloyed compounds are presented in this work.

Zinc Blende 0D Quantum Dots to Wurtzite 1D Quantum Wires: The Oriented Attachment and Phase Change in ZnSe Nanostructures

2013 ◽  
Vol 4 (19) ◽  
pp. 3292-3297 ◽  
Author(s):  
Suresh Sarkar ◽  
Shinjita Acharya ◽  
Arup Chakraborty ◽  
Narayan Pradhan
Keyword(s):  
Quantum Dots ◽  
Phase Change ◽  
Quantum Wires ◽  
Oriented Attachment ◽  
Zinc Blende

Ultrafast Carrier Dynamics, Optical Amplification, and Lasing in Nanocrystal Quantum Dots

MRS Bulletin ◽  
2001 ◽  
Vol 26 (12) ◽  
pp. 998-1004 ◽  
Author(s):  
Victor I. Klimov ◽  
Moungi G. Bawendi
Keyword(s):  
Quantum Dots ◽  
Quantum Wells ◽  
Quantum Wires ◽  
Electronic States ◽  
Three Dimensions ◽  
Band Edge ◽  
Lasing Threshold ◽  
Wide Energy Range ◽  
Band Edge Emission ◽  
Edge States

Semiconductor materials are widely used in both optically and electrically pumped lasers. The use of semiconductor quantum wells (QWs) as optical-gain media has resulted in important advances in laser technology. QWs have a two-dimensional, step-like density of electronic states that is nonzero at the band edge, enabling a higher concentration of carriers to contribute to the band-edge emission and leading to a reduced lasing threshold, improved temperature stability, and a narrower emission line. A further enhancement in the density of the band-edge states and an associated reduction in the lasing threshold are in principle possible using quantum wires and quantum dots (QDs), in which the confinement is in two and three dimensions, respectively. In very small dots, the spacing of the electronic states is much greater than the available thermal energy (strong confinement), inhibiting thermal depopulation of the lowest electronic states. This effect should result in a lasing threshold that is temperatureinsensitive at an excitation level of only 1 electron-hole (e-h) pair per dot on average. Additionally, QDs in the strongconfinement regime have an emission wavelength that is a pronounced function of size, adding the advantage of continuous spectral tunability over a wide energy range simply by changing the size of the dots.

A numerically efficient approach to the modelling of double-Qdot channels

2013 ◽  
Vol 2 (1) ◽  
Author(s):  
A. Shamloo ◽  
A.P. Sowa
Keyword(s):  
Quantum Dots ◽  
Quantum Computing ◽  
Ab Initio ◽  
Quantum System ◽  
Electronic Properties ◽  
Density Of States ◽  
Potential Application ◽  
Ab Initio Simulation ◽  
Efficient Approach ◽  
Essential Properties

AbstractWe consider the electronic properties of a system consisting of two quantum dots in physical proximity, which we will refer to as the double-Qdot. Double-Qdots are attractive in light of their potential application to spin-based quantum computing and other electronic applications, e.g. as specialized sensors. Our main goal is to derive the essential properties of the double-Qdot from a model that is rigorous yet numerically tractable, and largely circumvents the complexities of an ab initio simulation. To this end we propose a novel Hamiltonian that captures the dynamics of a bi-partite quantum system, wherein the interaction is described via a Wiener-Hopf type operator. We subsequently describe the density of states function and derive the electronic properties of the underlying system. The analysis seems to capture a plethora of electronic profiles, and reveals the versatility of the proposed framework for double-Qdot channel modelling.

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