In-Vacuo Surface Analysis of Diamond Nucleation and Growth on SI (111) and Polycrystalline Tantalum

1991 ◽  
pp. 737-744 ◽  
Author(s):  
B. E. Williams ◽  
B. R. Stoner ◽  
D. A. Asbury ◽  
J. T. Glass
Keyword(s):  
Surface Analysis ◽  
Nucleation And Growth ◽  
Diamond Nucleation

Diamond nucleation and growth at the early stages on Si(100) monitored by electron spectroscopies

1994 ◽  
Vol 81 (3) ◽  
pp. 309-324 ◽  
Author(s):  
F. Le Normand ◽  
A. Ababou ◽  
N. Braul ◽  
B. Carriére ◽  
L. Fayette ◽  
...  
Keyword(s):  
Nucleation And Growth ◽  
Diamond Nucleation ◽  
Early Stages

Competition between diamond nucleation and growth under bias voltage by microwave plasma chemical vapor deposition

CrystEngComm ◽  
2021 ◽  
Author(s):  
Weihua Wang ◽  
Bing Dai ◽  
Guoyang Shu ◽  
Yang Wang ◽  
Benjian Liu ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Bias Voltage ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Nucleation And Growth ◽  
High Density ◽  
Plasma Chemical ◽  
Diamond Nucleation ◽  
Plasma Chemical Vapor Deposition

Diamond nucleation on iridium (001) substrates was investigated under different bias conditions. High-density epitaxial nucleation can be obtained in a narrow bias window. This paper reports both the typical nucleation...

Formation of icosahedron twins during initial stages of heteroepitaxial diamond nucleation and growth

2019 ◽  
Vol 125 (7) ◽  
pp. 075305 ◽  
Author(s):  
Vadim Lebedev ◽  
Taro Yoshikawa ◽  
Christian Giese ◽  
Lutz Kirste ◽  
Agnė Žukauskaitė ◽  
...  
Keyword(s):  
Nucleation And Growth ◽  
Diamond Nucleation

The Initial Stages of Plasma Synthesis of Diamond Films

1988 ◽  
Vol 129 ◽  
Author(s):  
R. Meilunas ◽  
M.S. Wong ◽  
K. Sheng ◽  
T.P. Ong ◽  
R.P.H. Chang
Keyword(s):  
Microwave Plasma ◽  
Diamond Films ◽  
Nucleation And Growth ◽  
Plasma Synthesis ◽  
X Ray Diffraction ◽  
Diamond Nucleation ◽  
X Ray ◽  
Deposition Parameters ◽  
Starting Conditions ◽  
Size And Morphology

ABSTRACTThe effects of plasma starting conditions on the initial stages of diamond nucleation and growth in a microwave plasma have been studied as a function of important deposition parameters. The influence of the substrate temperature on the diamond nucleation rate, quality, and final film morphology has been elucidated through various analytical measurements. The diamond films are characterized with Raman spectroscopy, X-ray diffraction, and scanning electron microscopy. Finally, methods are described for reproducibly controlling the grain size and morphology of the diamond films for tribological and abrasive applications.

Study of carbide-forming element interlayers for diamond nucleation and growth on silicon and WC-Co substrates

2010 ◽  
Vol 519 (5) ◽  
pp. 1606-1610 ◽  
Author(s):  
Y. Tang ◽  
Y.S. Li ◽  
Q. Yang ◽  
A. Hirose
Keyword(s):  
Nucleation And Growth ◽  
Diamond Nucleation

Step-by-step simulations of diamond nucleation and growth on a silicon (001) surface

2000 ◽  
Vol 9 (2) ◽  
pp. 146-155
Author(s):  
R.Q. Zhang ◽  
E. Bertran ◽  
W.L. Wang ◽  
J. Esteve ◽  
S.T. Lee
Keyword(s):  
Nucleation And Growth ◽  
Diamond Nucleation

Influence of Al content on diamond nucleation and growth on Fe-Al alloys in CH4-H2 plasma atmosphere

2016 ◽  
Vol 688 ◽  
pp. 460-467 ◽  
Author(s):  
T.J. Pan ◽  
F. Ye ◽  
X.J. Li ◽  
L.L. He ◽  
M. Sanchez-Pasten ◽  
...  
Keyword(s):  
Nucleation And Growth ◽  
Al Alloys ◽  
Diamond Nucleation ◽  
Al Content

Diamond growth on carbide surfaces using a selective etching technique

1994 ◽  
Vol 9 (8) ◽  
pp. 2154-2163 ◽  
Author(s):  
K.J. Grannen ◽  
R.P.H. Chang
Keyword(s):  
Vapor Deposition ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Diamond Powder ◽  
Nucleation And Growth ◽  
Diamond Growth ◽  
Etching Technique ◽  
Diamond Nucleation ◽  
Nucleation And Growth Mechanism

Microwave plasma-enhanced chemical vapor deposition of diamond films on silicon carbide and tungsten carbide (with 6% cobalt) surfaces using fluorocarbon gases has been demonstrated. No diamond powder pretreatment is necessary to grow these films with a (100) faceted surface morphology. The diamond films are characterized by scanning electron microscopy and Raman spectroscopy. The proposed nucleation and growth mechanism involves etching of the noncarbon component of the carbide by atomic fluorine to expose surface carbon atoms and diamond nucleation and growth on these exposed carbon atoms. Hydrogen is necessary in the growth process to limit the rapid etching of the carbide substrates by corrosive fluorine atoms.

Effect of ion beam nitriding on diamond nucleation and growth onto steel substrates

2001 ◽  
Vol 10 (8) ◽  
pp. 1506-1510 ◽  
Author(s):  
N.G. Shang ◽  
Z.F. Zhou ◽  
C.S. Lee ◽  
I. Bello ◽  
S.T. Lee
Keyword(s):  
Ion Beam ◽  
Nucleation And Growth ◽  
Diamond Nucleation ◽  
Steel Substrates

Nucleation and growth of diamond on a well-defined Si(311) substrate monitored by in vacuo surface analysis

1994 ◽  
Vol 3 (4-6) ◽  
pp. 569-572 ◽  
Author(s):  
L. Demuynck ◽  
F. Bigorgne ◽  
B. Carrière ◽  
A. George ◽  
J.P. Michel ◽  
...  
Keyword(s):  
Surface Analysis ◽  
Nucleation And Growth
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