Diamond growth on carbide surfaces using a selective etching technique

1994 ◽  
Vol 9 (8) ◽  
pp. 2154-2163 ◽  
Author(s):  
K.J. Grannen ◽  
R.P.H. Chang
Keyword(s):  
Vapor Deposition ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Diamond Powder ◽  
Nucleation And Growth ◽  
Diamond Growth ◽  
Etching Technique ◽  
Diamond Nucleation ◽  
Nucleation And Growth Mechanism

Microwave plasma-enhanced chemical vapor deposition of diamond films on silicon carbide and tungsten carbide (with 6% cobalt) surfaces using fluorocarbon gases has been demonstrated. No diamond powder pretreatment is necessary to grow these films with a (100) faceted surface morphology. The diamond films are characterized by scanning electron microscopy and Raman spectroscopy. The proposed nucleation and growth mechanism involves etching of the noncarbon component of the carbide by atomic fluorine to expose surface carbon atoms and diamond nucleation and growth on these exposed carbon atoms. Hydrogen is necessary in the growth process to limit the rapid etching of the carbide substrates by corrosive fluorine atoms.

Competition between diamond nucleation and growth under bias voltage by microwave plasma chemical vapor deposition

CrystEngComm ◽  
2021 ◽  
Author(s):  
Weihua Wang ◽  
Bing Dai ◽  
Guoyang Shu ◽  
Yang Wang ◽  
Benjian Liu ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Bias Voltage ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Nucleation And Growth ◽  
High Density ◽  
Plasma Chemical ◽  
Diamond Nucleation ◽  
Plasma Chemical Vapor Deposition

Diamond nucleation on iridium (001) substrates was investigated under different bias conditions. High-density epitaxial nucleation can be obtained in a narrow bias window. This paper reports both the typical nucleation...

Evolution of surface relief of epitaxial diamond films upon growth resumption by microwave plasma chemical vapor deposition

CrystEngComm ◽  
2020 ◽  
Vol 22 (12) ◽  
pp. 2138-2146 ◽  
Author(s):  
G. Shu ◽  
V. G. Ralchenko ◽  
A. P. Bolshakov ◽  
E. V. Zavedeev ◽  
A. A. Khomich ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
Surface Relief ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Diamond Growth ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Step Growth ◽  
Growth Features

Homoepitaxial diamond growth may proceed with stops and resumptions to produce thick crystals. We found the resumption procedure to take place in a complex way, via a disturbance of step growth features, followed by the recovery after a certain time.

A sequential Raman analysis of the growth of diamond films on silicon substrates in a microwave plasma assisted chemical vapor deposition reactor

1997 ◽  
Vol 12 (10) ◽  
pp. 2686-2698 ◽  
Author(s):  
L. Fayette ◽  
B. Marcus ◽  
M. Mermoux ◽  
N. Rosman ◽  
L. Abello ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Sequential Analysis ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Diamond Growth ◽  
Internal Stresses ◽  
Nucleation Density ◽  
Silicon Substrates

A sequential analysis of the growth of diamond films on silicon substrates in a microwave plasma assisted chemical vapor deposition (CVD) reactor has been performed by Raman spectroscopy. The plasma was switched off during measurements, but the substrate heating was maintained to minimize thermoelastic stresses. The detectivity of the present experimental setup has been estimated to be about a few tens of μmg/cm2. From such a technique, one expects to analyze different aspects of diamond growth on a non-diamond substrate. The evolution of the signals arising from the substrate shows that the scratching treatment used to increase the nucleation density induces an amorphization of the silicon surface. This surface is annealed during the first step of deposition. The evolution of the line shape of the spectra indicates that the non-diamond phases are mainly located in the grain boundaries. The variation of the integrated intensity of the Raman signals has been interpreted using a simple absorption model. A special emphasis was given to the evolution of internal stresses during deposition. It was verified that compressive stresses were generated when coalescence of crystals took place.

Epitaxial Growth of Diamond on an Iridium (100) Substrate by Microwave Plasma-Assisted Chemical Vapor Deposition

1998 ◽  
Vol 555 ◽  
Author(s):  
Toshiki Tsubota ◽  
Shigenori Tsuruga ◽  
Takeyasu Saito ◽  
Katsuki Kusakabe ◽  
Shigeharu Morooka ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Substrate Temperature ◽  
Vapor Deposition ◽  
Methane Concentration ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Diamond Growth ◽  
Negative Bias ◽  
Diamond Particles

AbstractDiamond films were grown heteroepitaxially on iridium (100) substrates by microwave plasma-assisted chemical vapor deposition (MPCVD) using methane gas as the carbon source. The iridium substrate, which was formed on a MgO (100) substrate by means of sputtering at 850 °C, was treated by imposing a negative bias between -150 and -200 V for 15 min. Methane concentration and substrate temperature were maintained at 3° and 650–740 °c, respectively. At a substrate temperature of 740 °C, diamond particles were formed at a population density of (0.15- 1.5)x108 cm-2, and most of them were oriented to MgO (100). After a further reaction for 1 h under conditions which were optimized for diamond growth, the oriented diamond particles were coalesced, and islands of (100) diamond were formed.

Nucleation and growth of diamond on carbon-implanted single crystal copper surfaces

1992 ◽  
Vol 7 (9) ◽  
pp. 2429-2439 ◽  
Author(s):  
T.P. Ong ◽  
Fulin Xiong ◽  
R.P.H. Chang ◽  
C.W. White
Keyword(s):  
Single Crystal ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Copper Surface ◽  
Nucleation And Growth ◽  
Diamond Growth ◽  
Diamond Nucleation ◽  
Copper Surfaces ◽  
Single Crystal Copper ◽  
Graphite Film

The nucleation and growth of diamond crystals on single crystal copper surfaces has been studied. Microwave plasma enhanced chemical vapor deposition (MPECVD) was used for diamond nucleation and growth. Prior to diamond nucleation, the single crystal copper surface is modified by carbon ion implantation at an elevated temperature (∊820 °C). This procedure leads to the formation of a graphite film on the copper surface, resulting in an enhancement of diamond crystallite nucleation. A simple lattice model has been constructed to describe the mechanism of diamond nucleation on graphite as 〈111〉diamond parallel to 〈0001〉graphite and 〈110〉diamond parallel to 〈11$\overline 1$0〉graphite. This leads to a good understanding of diamond growth on carbon-implanted copper surfaces.

Identification of hydrocarbon precursors to diamond in chemical vapor deposition using carbon monoxide reagent

1993 ◽  
Vol 8 (9) ◽  
pp. 2245-2249 ◽  
Author(s):  
Curtis E. Johnson ◽  
Wayne A. Weimer
Keyword(s):  
Carbon Monoxide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
High Energy ◽  
Diamond Growth ◽  
Methyl Radical ◽  
Gaseous Products

Diamond films were grown by microwave plasma-assisted chemical vapor deposition using mixtures of 13CH4 and CO. Mass spectrometry was used to identify CO, CH4, and C2H2 as the stable gaseous products in the reactor exhaust gas. By comparing gaseous 13C compositions with that of the diamond films, the efficiency of diamond growth from methane (possibly via the methyl radical) is found to be about two orders of magnitude higher than that for carbon monoxide. Most of the diamond that is formed from the CO reagent results from the conversion of CO to hydrocarbons. The conversion of CO to hydrocarbons is attributed to activation of CO by high-energy electrons in the plasma.

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