Deformation of Advanced Materials: Case of Sapphire Modified by Heavy Ion Implantation and of YBCO Superconducting Crystals

1995 ◽  
pp. 149-160
Author(s):  
R. Nowak
Keyword(s):  
Ion Implantation ◽  
Heavy Ion ◽  
Advanced Materials

The Production of Porous Structures on Si, Ge and GaAs by High Dose Ion Implantation.

1983 ◽  
Vol 27 ◽  
Author(s):  
J.S. Williams ◽  
D.J. Chivers ◽  
R.G. Elliman ◽  
S.T. Johnson ◽  
E.M. Lawson ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Strong Evidence ◽  
Heavy Ion ◽  
High Dose ◽  
Porous Structures ◽  
Structural Modifications ◽  
Gaas Substrates ◽  
Ion Implanted

ABSTRACTThis paper presents new data on the previously observed porous structures which can be developed in high dose, ion implanted Ge. In addition, we provide strong evidence to suggest that such porous structures can be formed in high dose, ion implanted Si and GaAs substrates under particular implant conditions. Comparison of the various systems using RBS analysis indicates that heavy ion doses as low as 1014 cm−2 can give rise to such structural modifications in GaAs, whereas doses of 1015 cm−2 are needed to observe an effect with Ge and doses usually exceeding 1016cm−2 are required for Si.

Indication of an anomalous amorphous state of Ge induced by heavy-ion implantation

1990 ◽  
Vol 125 (3) ◽  
pp. 258-263 ◽  
Author(s):  
G. Petö ◽  
L. Rosta ◽  
J. Kanski ◽  
A. Barna ◽  
A. Menelle ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Amorphous State ◽  
Heavy Ion

Effect of heavy ion implantation on self-assembled single layer InAs/GaAs quantum dots

2010 ◽  
Vol 43 (50) ◽  
pp. 505302 ◽  
Author(s):  
R Sreekumar ◽  
A Mandal ◽  
S Chakrabarti ◽  
S K Gupta
Keyword(s):  
Quantum Dots ◽  
Ion Implantation ◽  
Single Layer ◽  
Heavy Ion ◽  
Self Assembled

Electronic transitions in silica glass during heavy-ion implantation

2004 ◽  
Vol 464-465 ◽  
pp. 264-267 ◽  
Author(s):  
O.A. Plaksin ◽  
Y. Takeda ◽  
N. Okubo ◽  
H. Amekura ◽  
K. Kono ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Silica Glass ◽  
Heavy Ion ◽  
Electronic Transitions

Radiation Effects in Nonmetals: Amorphization, Phase Decomposition, and Nanoparticles

1998 ◽  
Vol 540 ◽  
Author(s):  
A. Meldrum ◽  
L.A. Boatner ◽  
C.W. White ◽  
D.O. Henderson
Keyword(s):  
Ion Implantation ◽  
Electron Irradiation ◽  
Radiation Effects ◽  
Elevated Temperatures ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Semiconductor Nanocrystals ◽  
Heavy Ion ◽  
Fused Silica ◽  
Near Surface

AbstractRadiation effects in nonmetals have been studied for well over a century by geologists, mineralogists, physicists, and materials scientists. The present work focuses on recent results of investigations of the ion-beam-induced amorphization of the ABO4 compounds – including the orthophosphates (LnPO4; Ln = lanthanides) and the orthosilicates: zircon (ZrSiO4), hafnon (HfSiO4), and thorite (ThSiO4). In the case of the orthosilicates, heavy-ion irradiation at elevated temperatures causes the precipitation of a nanocrystalline metal oxide. Electron irradiation effects in these amorphized insulating ceramics can produce localized recrystallization on a nanometer scale. Similar electron irradiation techniques were used to nucleate monodispersed compound semiconductor nanocrystals formed by ion implantation of the elemental components into fused silica. Methods for the formation of novel structural relationships between embedded nanocrystals and their hosts have been developed and the results presented here demonstrate the general flexibility of ion implantation and irradiation techniques for producing unique near-surface microstructures in ion-implanted host materials.

RF characteristics of IHQ linac for heavy ion implantation

1998 ◽  
Vol 139 (1-4) ◽  
pp. 401-404 ◽  
Author(s):  
Takashi Ito ◽  
E. Osvath ◽  
Kimikazu Sasa ◽  
Noriyosu Hayashizaki ◽  
Katsushi Isokawa ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Heavy Ion
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