The Role of Surface and Gas Phase Reactions in Atomic Layer Epitaxy

1989 ◽  
pp. 257-266
Author(s):  
P. Daniel Dapkus ◽  
Steve P. DenBaars ◽  
Qisheng Chen ◽  
B. Y. Maa
Keyword(s):  
Gas Phase ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Gas Phase Reactions

The role of surface and gas phase reactions in atomic layer epitaxy

1989 ◽  
Vol 19 (1-2) ◽  
pp. 137-147 ◽  
Author(s):  
P.D. Dapkus ◽  
S.P. DenBaars ◽  
Q. Chen ◽  
W.G. Jeong ◽  
B.Y. Maa
Keyword(s):  
Gas Phase ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Gas Phase Reactions

Atomie Layer Epitaxy ia a Rotating Disk Reactor

1991 ◽  
Vol 240 ◽  
Author(s):  
H. Liu ◽  
P. A. Zawadzki ◽  
P. E. Norris
Keyword(s):  
Growth Rate ◽  
Gas Phase ◽  
Atomic Layer ◽  
Rotating Disk ◽  
Atomic Layer Epitaxy ◽  
Process Window ◽  
Phase Reaction ◽  
Gas Phase Reactions ◽  
Group Iii ◽  
Reaction Complex

ABSTRACTCurrent difficulties of Atomic Layer Epitaxy (ALE) include relatively low growth rates and narrow process windows. Gas phase reaction, complex behavior of valve switching and purging times are suggested as the major causes [1,2]. We have used a movable X-shaped mechanical barrier to divide the growth chamber into four zones. Each zone supplies either source gas or purging hydrogen. If the barrier is positioned 0.5–2 mm from the wafer carrier, it can efficiently shear off the boundary layer and therefore reduce gas phase reactions. The substrate, constantly rotating beneath the barrier, is alternately exposed to group III or V sources by purging zones. The result is that process times are significantly reduced, saturated growth rate of 1 μm/hour is obtained and a relatively wide process window is observed. It was found that the growth mode was not purely ALE, due to source gas mixing which contributes an additional, possible kinetically limited, component of growth rate. However, this was also found to result in uniform film.

The Role of Starting Potential in the Kinetics of Chemical Reactions under Electrodeless Discharge

1970 ◽  
Vol 25 (11) ◽  
pp. 1772
Author(s):  
T.S.R Ao ◽  
A. Patil
Keyword(s):  
Gas Phase ◽  
Chemical Reactions ◽  
Electric Discharge ◽  
Specific Rate ◽  
Gas Phase Reactions ◽  
Electrodeless Discharge ◽  
First Order ◽  
Kinetics Of

Abstract It has been shown that in kinetically first order gas phase reactions occuring under electric discharge, such as the decomposition of N2O, the application, at various initial pressures, of the same multiple of the respective starting potential ensures that the reaction occurs at the same specific rate.

Photocatalytic degradation of trichloroethylene in dry and humid atmospheres: role of gas-phase reactions

2004 ◽  
Vol 217 (1-2) ◽  
pp. 109-115 ◽  
Author(s):  
Placidus B. Amama ◽  
Kiminori Itoh ◽  
Masayuki Murabayashi
Keyword(s):  
Photocatalytic Degradation ◽  
Gas Phase ◽  
Gas Phase Reactions

Gas-phase reactions of anions with halogenated methanes at 297 ± 2 K

1976 ◽  
Vol 54 (10) ◽  
pp. 1643-1659 ◽  
Author(s):  
K. Tanaka ◽  
G. I. Mackay ◽  
J. D. Payzant ◽  
D. K. Bohme
Keyword(s):  
Gas Phase ◽  
Rate Constants ◽  
Hydrogen Atom Transfer ◽  
Gas Phase Reactions ◽  
Phase Measurements ◽  
Displacement Reactions ◽  
Nucleophilic Reactivity ◽  
Apparent Activation Energies

The rate constants for a number of exothermic displacement (SN2) reactions of the type X− + CH3Y → Y− + CH3X where X− = H−, O−, C−, F−, S−, Cl−, OH−, C2−, CN−, SH−, S2−, C2H−, NH2−, NO2−, CHF−, CH2Cl−, CH2Br−, CH3O−, CH3S−, and CH3NH− and Y = F, Cl, and Br, have been measured in the gas phase at 297 ± 2 K using the flowing after-glow technique. These gas-phase measurements provided an opportunity to determine the intrinsic nucleophilic reactivity of 'nude' anions and hence to assess the role of solvation in the kinetics of SN2 reactions proceeding in solution. Comparisons of the experimental rate constants with rate constants calculated using classical theories of capture indicate that several displacement reactions may possess large intrinsic energies of activation, [Formula: see text]. Correlations were found between apparent activation energies and the heats of reaction. These correlations provided a convenient classification of the various anion nucleophiles. Displacement was observed to compete with proton transfer in reactions involving nucleophiles of high intrinsic basicity and with hydrogen atom transfer and H2+ transfer in the reactions of the O− radical anion.

Epitaxial Si1−yCy alloys: The role of surface and gas phase reactions

1999 ◽  
Vol 85 (2) ◽  
pp. 1240-1242 ◽  
Author(s):  
A. C. Mocuta ◽  
D. W. Greve
Keyword(s):  
Gas Phase ◽  
Gas Phase Reactions
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