Microinhomogeneity of Iron Silicide

ABSTRACTIron silicide thin films were prepared on insulating substrates using RF magnetron sputtering method. Amorphous, polycrystalline and epitaxial β-FeSi2 were obtained on MgO(001), Al2O3(110) and Al2O3(001) substrates, respectively. Electrical conductivities of these films showed similar temperature dependence. Intrinsic band conduction and hopping conduction mechanism were predominant above and below 600K, respectively. The localized ordering in the polycrystalline and epitaxial films that controled the movement of carriers were as low as in the amorphous film. For the epitaxial β-FeSi2 film, electrical conductivity below 600K were affected by atomic ratio of silicon to iron (Si/Fe) in the films, because the localized ordering in the films decreased as Si/Fe atomic ratio decreased.

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Specific heat study of ternary iron-silicide superconductor Lu2Fe3Si5: Evidence for two-gap superconductivity

Physica C Superconductivity ◽

10.1016/j.physc.2008.05.018 ◽

2008 ◽

Vol 468 (15-20) ◽

pp. 1138-1140 ◽

Cited By ~ 8

Author(s):

Y. Nakajima ◽

G.J. Li ◽

T. Tamegai

Keyword(s):

Specific Heat ◽

Iron Silicide

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Nanowire Fabrication of Silicon-Based Materials

Materials Science Forum ◽

10.4028/www.scientific.net/msf.561-565.1197 ◽

2007 ◽

Vol 561-565 ◽

pp. 1197-1199

Author(s):

Hideo Kohno ◽

Seiji Takeda

Keyword(s):

Electron Microscopy ◽

Silicon Carbide ◽

Silicon Germanium ◽

Iron Silicide ◽

Growth Mechanisms ◽

Step Process ◽

One Step ◽

Silicon Based

This paper describes our recent achievements in fabricating various kinds of nanowires of silicon-based materials including beta iron-silicide, silicon carbide, and silicon germanium. Some of them can be grown directly at one-step process, while the others can be fabricated using nanowire templates. We discuss their structures, growth mechanisms, and properties based on electron microscopy observations.

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Orientational ordering of iron silicide films on sputter etched Si substrate

Vacuum ◽

10.1016/j.vacuum.2004.01.035 ◽

2004 ◽

Vol 74 (3-4) ◽

pp. 619-624 ◽

Cited By ~ 7

Author(s):

Shinichi Igarashi ◽

Toshinobu Katsumata ◽

Masaharu Haraguchi ◽

Takeru Saito ◽

Kenji Yamaguchi ◽

...

Keyword(s):

Iron Silicide ◽

Si Substrate ◽

Orientational Ordering

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Position- and size-controlled fabrication of iron silicide nanorods by electron-beam-induced deposition using an ultrahigh-vacuum transmission electron microscope

Applied Physics Letters ◽

10.1063/1.1922576 ◽

2005 ◽

Vol 86 (18) ◽

pp. 183104 ◽

Cited By ~ 21

Author(s):

M. Tanaka ◽

F. Chu ◽

M. Shimojo ◽

M. Takeguchi ◽

K. Mitsuishi ◽

...

Keyword(s):

Electron Beam ◽

Electron Microscope ◽

Transmission Electron Microscope ◽

Iron Silicide ◽

Ultrahigh Vacuum ◽

Transmission Electron ◽

Electron Beam Induced Deposition ◽

Size Controlled

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Deep levels in silicon after iron silicide formation

Semiconductor Science and Technology ◽

10.1088/0268-1242/10/12/014 ◽

1995 ◽

Vol 10 (12) ◽

pp. 1645-1651 ◽

Cited By ~ 6

Author(s):

U Erlesand ◽

M Ostling

Keyword(s):

Iron Silicide ◽

Deep Levels ◽

Silicide Formation

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Atomistic investigation of surface characteristics and electronic features at high-purity FeSi(110) presenting interfacial metallicity

Proceedings of the National Academy of Sciences ◽

10.1073/pnas.2021203118 ◽

2021 ◽

Vol 118 (17) ◽

pp. e2021203118

Author(s):

Biao Yang ◽

Martin Uphoff ◽

Yi-Qi Zhang ◽

Joachim Reichert ◽

Ari Paavo Seitsonen ◽

...

Keyword(s):

Low Temperature ◽

Density Of States ◽

Density Functional ◽

Iron Silicide ◽

Density Functional Theory Calculations ◽

Surface Characteristics ◽

Scanning Tunneling ◽

Magnetic Characteristics ◽

Tunneling Microscopy ◽

Single Crystal Surfaces

Iron silicide (FeSi) is a fascinating material that has attracted extensive research efforts for decades, notably revealing unusual temperature-dependent electronic and magnetic characteristics, as well as a close resemblance to the Kondo insulators whereby a coherent picture of intrinsic properties and underlying physics remains to be fully developed. For a better understanding of this narrow-gap semiconductor, we prepared and examined FeSi(110) single-crystal surfaces of high quality. Combined insights from low-temperature scanning tunneling microscopy and density functional theory calculations (DFT) indicate an unreconstructed surface termination presenting rows of Fe–Si pairs. Using high-resolution tunneling spectroscopy (STS), we identify a distinct asymmetric electronic gap in the sub-10 K regime on defect-free terraces. Moreover, the STS data reveal a residual density of states in the gap regime whereby two in-gap states are recognized. The principal origin of these features is rationalized with the help of the DFT-calculated band structure. The computational modeling of a (110)-oriented slab notably evidences the existence of interfacial intragap bands accounting for a markedly increased density of states around the Fermi level. These findings support and provide further insight into the emergence of surface metallicity in the low-temperature regime.

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