AbstractDiamond wire sawing has been developed to reduce the cutting loss when cutting silicon wafers from ingots. The surface of silicon solar cells must be flawless in order to achieve the highest possible efficiency. However, the surface is damaged during sawing. The extent of the damage depends primarily on the material removal mode. Under certain conditions, the generally brittle material can be machined in ductile mode, whereby considerably fewer cracks occur in the surface than with brittle material removal. In the presented paper, a numerical model is developed in order to support the optimisation of the machining process regarding the transition between ductile and brittle material removal. The simulations are performed with an GPU-accelerated in-house developed code using mesh-free methods which easily handle large deformations while classic methods like FEM would require intensive remeshing. The Johnson-Cook flow stress model is implemented and used to evaluate the applicability of a model for ductile material behaviour in the transition zone between ductile and brittle removal mode. The simulation results are compared with results obtained from single grain scratch experiments using a real, non-idealised grain geometry as present in the diamond wire sawing process.
Simulation of the ductile machining mode of silicon
