Study of the Junction Depth Effect on Ballistic Current Using the Subband Decomposition Method

2007 ◽  
pp. 205-208 ◽  
Author(s):  
M. Ali. Pourghaderi ◽  
Wim Magnus ◽  
Bart Sorée ◽  
Marc Meuris ◽  
Marc Heyns ◽  
...  
Keyword(s):  
Decomposition Method ◽  
Subband Decomposition ◽  
Junction Depth ◽  
Depth Effect

Numerical analysis of junction‐depth effect in the grating‐type Si solar cell

1981 ◽  
Vol 52 (3) ◽  
pp. 1548-1551
Author(s):  
H. L. Hwang ◽  
D. C. Liu ◽  
J. E. Lin ◽  
J. J. Loferski
Keyword(s):  
Solar Cell ◽  
Numerical Analysis ◽  
Junction Depth ◽  
Depth Effect ◽  
Si Solar Cell

scholarly journals Hybrid fluid-quantum coupling for the simulation of the transport of partially quantized particles in a DG-MOSFET

2015 ◽  
Vol 4 (1) ◽  
pp. 1-17
Author(s):  
C. Jourdana ◽  
N. Vauchelet
Keyword(s):  
Electronic Transport ◽  
Decomposition Method ◽  
Longitudinal Direction ◽  
Quantum Model ◽  
Subband Decomposition ◽  
Diffusive Regime ◽  
Dg Mosfet ◽  
Quantum Coupling ◽  
Hybrid Fluid ◽  
Classical Transport

AbstractThis paper is devoted to numerical simulations of electronic transport in nanoscale semiconductor devices forwhich charged carriers are extremely confined in one direction. In such devices, like DG-MOSFETs, the subband decomposition method is used to reduce the dimensionality of the problem. In the transversal direction electrons are confined and described by a statistical mixture of eigenstates of the Schrödinger operator. In the longitudinal direction, the device is decomposed into a quantum zone (where quantum effects are expected to be large) and a classical zone (where they are negligible). In the largely doped source and drain regions of a DG-MOSFET, the transport is expected to be highly collisional; then a classical transport equation in diffusive regime coupled with the subband decomposition method is used for the modeling, as proposed in N. Ben Abdallah et al. (2006, Proc. Edind. Math. Soc. [7]). In the quantum region, the purely ballistic model presented in Polizzi et al. (2005, J. Comp. Phys. [25]) is used. This work is devoted to the hybrid coupling between these two regions through connection conditions at the interfaces. These conditions have been obtained in order to verify the continuity of the current. A numerical simulation for a DG-MOSFET, with comparison with the classical and quantum model, is provided to illustrate our approach.

A decomposition method in non-linear programmm

Optimization ◽  
1975 ◽  
Vol 6 (4) ◽  
pp. 549-559
Author(s):  
L. Gerencsér
Keyword(s):  
Decomposition Method ◽  
Non Linear

SKIN DEPTH EFFECT IN THE RF COLLAPSE STUDIES

1980 ◽  
Vol 41 (C1) ◽  
pp. C1-217-C1-218 ◽  
Author(s):  
G. Karczewski ◽  
M. Kopcewicz ◽  
A. Kotlicki
Keyword(s):  
Skin Depth ◽  
Depth Effect

DECOMPOSITION METHOD FOR DETERMINING THE HIGH REFLECTED SECTIONS OF A COMPLEX OBJECT SURFACE

2018 ◽  
Vol 77 (11) ◽  
pp. 945-956 ◽  
Author(s):  
N. N. Kolchigin ◽  
M. N. Legenkiy ◽  
A. A. Maslovskiy ◽  
А. Demchenko ◽  
S. Vinnichenko ◽  
...  
Keyword(s):  
Decomposition Method ◽  
Complex Object ◽  
Object Surface

A Spectrum-Adaptive Decomposition Method for Effective Atomic Number Estimation Using Dual Energy CT

2020 ◽  
Vol 2020 (14) ◽  
pp. 293-1-293-7
Author(s):  
Ankit Manerikar ◽  
Fangda Li ◽  
Avinash C. Kak
Keyword(s):  
Atomic Number ◽  
Decomposition Method ◽  
Traditional Approach ◽  
Effective Atomic Number ◽  
Dual Energy ◽  
Performance Comparison ◽  
Estimation Methods ◽  
Dual Energy Ct ◽  
Projection Data ◽  
X Ray

Dual Energy Computed Tomography (DECT) is expected to become a significant tool for voxel-based detection of hazardous materials in airport baggage screening. The traditional approach to DECT imaging involves collecting the projection data using two different X-ray spectra and then decomposing the data thus collected into line integrals of two independent characterizations of the material properties. Typically, one of these characterizations involves the effective atomic number (Zeff) of the materials. However, with the X-ray spectral energies typically used for DECT imaging, the current best-practice approaches for dualenergy decomposition yield Zeff values whose accuracy range is limited to only a subset of the periodic-table elements, more specifically to (Z < 30). Although this estimation can be improved by using a system-independent ρe — Ze (SIRZ) space, the SIRZ transformation does not efficiently model the polychromatic nature of the X-ray spectra typically used in physical CT scanners. In this paper, we present a new decomposition method, AdaSIRZ, that corrects this shortcoming by adapting the SIRZ decomposition to the entire spectrum of an X-ray source. The method reformulates the X-ray attenuation equations as direct functions of (ρe, Ze) and solves for the coefficients using bounded nonlinear least-squares optimization. Performance comparison of AdaSIRZ with other Zeff estimation methods on different sets of real DECT images shows that AdaSIRZ provides a higher output accuracy for Zeff image reconstructions for a wider range of object materials.

Sign in / Sign up

Export Citation Format

Share Document