Effect of Nonstoichiometry on the Half-Metallic Character of Co $$_{2}$$ 2 MnSi and Its Application to the Spin Sources of Spintronic Devices

2015 ◽  
pp. 413-444
Author(s):  
Masafumi Yamamoto ◽  
Tetsuya Uemura
Keyword(s):  
Half Metallic ◽  
Spintronic Devices ◽  
Metallic Character

Two-dimensional FeTe2 and predicted Janus FeXS (X: Te and Se) monolayers with intrinsic half-metallic character: Tunable electronic and magnetic properties via strain and electric field

2021 ◽  
Author(s):  
Asadollah Bafekry ◽  
M. Faraji ◽  
Siavash Karbasizadeh ◽  
Abdolhosseini Sarsari Sarsari ◽  
Hamad R. Jappor ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Electric Field ◽  
Dynamical Stability ◽  
Two Dimensional ◽  
Half Metallic ◽  
Electronic And Magnetic Properties ◽  
Metallic Character

Driven by the fabrication of bulk and monolayer FeTe2 ACS Nano 2020, 14, 9, 11473-11481], we explore the lattice, dynamical stability, electronic and magnetic properties of FeTeS and FeSeS Janus...

Robust Half-Metallic Character In KMnGe Half-Heusler Compound

2021 ◽  
Vol 1 (2) ◽  
pp. 9-17
Author(s):  
Chibueze T. C ◽  
Ezema F. I
Keyword(s):  
Energy Gap ◽  
Half Metallic ◽  
Spintronic Devices ◽  
Electronic Spin ◽  
Materials Research ◽  
Direct Band ◽  
Spin Injectors ◽  
Low Pressures

The search for spin injectors and spin sources in spintronic devices is a significant facet of materials research today. Consequently, half-Heusler (HAH) KMnGe alloy has been recommended as one such admissible materials. Herein, a rigorous examination of the structural, magnetic and electronic properties of HAH KMnGe alloy is done using ab initio method within the bolstered up rendition of the functional by Perdew and his group. Our result shows that HAH KmnGe alloy expresses type-1 and type-2 HAH  structural ground state at high and low pressures respectively, which may pose a challenge in application. Impressively, HAH KMnGe alloy exhibits half metallic characteristic with an indirect energy gap in the Γ-X symmetry k-point and direct band gap at X-point in the minority electronic spin states for type-1 and type-2 phase respectively. Our findings agree fundamentally with some previous findings in the literature and suggests that the HAH KMnGe alloy is a credible excellent spin source in future spintronic devices.

scholarly journals Structural and Microanalytical Studies of CrO2 Thin Films on c-Sapphire by High Resolution Electron Microscopy Methods

2008 ◽  
Vol 14 (S3) ◽  
pp. 47-48
Author(s):  
M.I. Ortiz ◽  
P.M. Sousa ◽  
C. Ballesteros ◽  
A.J. Silvestre ◽  
L.F. Cohen ◽  
...  
Keyword(s):  
Room Temperature ◽  
Tunnel Junctions ◽  
High Resolution Electron Microscopy ◽  
Chromium Dioxide ◽  
Recording Industry ◽  
Insulating Layer ◽  
Half Metallic ◽  
Spintronic Devices ◽  
Resolution Electron ◽  
Spin Polarized

Chromium dioxide (CrO2) has been extensively used in the magnetic recording industry. However, it is its ferromagnetic half-metallic nature that has more recently attracted much attention, primarily for the development of spintronic devices. CrO2 is the only stoichiometric binary oxide theoretically predicted to be fully spin polarized at the Fermi level. It presents a Curie temperature of ∼ 396 K, i.e. well above room temperature, and a magnetic moment of 2 mB per formula unit. However an antiferromagnetic native insulating layer of Cr2O3 is always present on the CrO2 surface which enhances the CrO2 magnetoresistance and might be used as a barrier in magnetic tunnel junctions.

DFT-Based Study on Electronic, Magnetic and Thermodynamic Properties of HoMnO3: A Half-Metallic Material with Nearly Linear Band Crosses

SPIN ◽  
2019 ◽  
Vol 09 (03) ◽  
pp. 1950017
Author(s):  
Ting-Zhou Li ◽  
R. Khenata ◽  
Houari Khachai ◽  
Xiaotian Wang
Keyword(s):  
Thermodynamic Properties ◽  
Density Functional ◽  
Hole Doping ◽  
Spin Orbit Coupling ◽  
Functional Theory ◽  
Metallic Material ◽  
Half Metallic ◽  
Spintronic Devices ◽  
Linear Band ◽  
Perovskite Type

A novel half-metallic family of materials, the multiple Dirac cones half-metals, has received considerable interest from researchers. Benefiting from its novel electronic structure, they are promising candidates for ultra-performance spintronic devices. In this paper, we propose a new half-metallic material, perovskite-type [Formula: see text] HoMnO3, which possesses similar Dirac-like multiple linear band crosses. We investigated its electronic, magnetic and thermodynamic properties in detail on the basis of density functional theory. The excellent band structures are robust enough against spin-orbit coupling and electron and hole doping. Through calculations, we confirmed its multi-aspect stability. Based on the current study, we confirm that HoMnO3 has potential for next-generation spintronic applications.

scholarly journals Tuning the electronic and magnetic properties of MoS2 nanotubes with vacancy defects

RSC Advances ◽  
2019 ◽  
Vol 9 (30) ◽  
pp. 17203-17210 ◽  
Author(s):  
Yanmei Yang ◽  
Yang Liu ◽  
Baoyuan Man ◽  
Mingwen Zhao ◽  
Weifeng Li
Keyword(s):  
Magnetic Properties ◽  
Dft Calculations ◽  
Half Metallic ◽  
Vacancy Defects ◽  
Spintronic Devices ◽  
Electronic And Magnetic Properties ◽  
Mos2 Nanotubes ◽  
The Rich

The effects of vacancy defects on the electronic and magnetic properties of MoS2 nanotubes were studied by DFT calculations. The rich semiconducting, metallic, and half-metallic properties make them suitable for electronic and spintronic devices.

Structural and electronic properties of V- and Co-doped single-walled ZnONT(8,0): Transition from semiconducting to metallic and half-metallic states

2015 ◽  
Vol 29 (07) ◽  
pp. 1550068
Author(s):  
R. Taghavi Mendi ◽  
M. Majidiyan Sarmazdeh ◽  
S. M. Elahi ◽  
M. R. Abolhassani ◽  
A. Boochani ◽  
...  
Keyword(s):  
Electronic Properties ◽  
First Principles ◽  
First Principles Calculations ◽  
Half Metallic ◽  
Spintronic Devices ◽  
Zno Nanotube ◽  
Structural And Electronic Properties ◽  
Direct Band ◽  
Structure Density ◽  
Co Doped

In this paper, some structural and electronic properties of V - and Co -doped single-walled ZnO nanotube (8,0), such as cohesive energy, geometric structure, density of states and band structure were investigated using first principles calculations. Our results showed that, first, the pure SWZnONT(8,0) can be stable and second, doped SWZnONTs(8,0) by V and Co atoms are more stable than pure SWZnONT(8,0) and TM impurities distort the structure of nanotubes around the TM impurities. The electronic results showed that pure SWZnONT(8,0) have a direct band gap about 1.443 eV and it is semiconductor. While with substituting V and Co instead of Zn in nanotube, a transition occurs from semiconducting to metallic and half-metallic states which these doped nanotubes as well as their magnetic properties are qualified for using in spintronic devices.

Room temperature formation of half-metallic Fe3O4 thin films for the application of spintronic devices

2003 ◽  
Vol 83 (8) ◽  
pp. 1590-1592 ◽  
Author(s):  
Jin Pyo Hong ◽  
Sung Bok Lee ◽  
Young Woo Jung ◽  
Jong Hyun Lee ◽  
Kap Soo Yoon ◽  
...  
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Half Metallic ◽  
Spintronic Devices
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