Morphology, Atomic and Electronic Structure of Metal Oxide (CuO x , SnO x ) Nanocomposites and Thin Films

The role of the metal-oxide interface in determining the spin polarization of electrons tunneling from or into ferromagnetic transition metals in magnetic tunnel junctions is reported. The spin polarization of cobalt in tunnel junctions with an alumina barrier is positive, but it is negative when the barrier is strontium titanate or cerium lanthanite. The results are ascribed to bonding effects at the transition metal–barrier interface. The influence of the electronic structure of metal-oxide interfaces on the spin polarization raises interesting fundamental problems and opens new ways to optimize the magnetoresistance of tunnel junctions.

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Morphology and local electronic structure of metal particles on metal oxide surfaces: a scanning tunneling microscopic and scanning tunneling spectroscopic study

Chemical Physics Letters ◽

10.1016/s0009-2614(96)01164-5 ◽

1996 ◽

Vol 263 (1-2) ◽

pp. 13-18 ◽

Cited By ~ 34

Author(s):

Chen Xu ◽

D.W. Goodman

Keyword(s):

Electronic Structure ◽

Metal Oxide ◽

Spectroscopic Study ◽

Metal Particles ◽

Scanning Tunneling ◽

Oxide Surfaces ◽

Metal Oxide Surfaces ◽

Structure Of Metal ◽

Local Electronic Structure

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First principles study of confinement effects for oxygen vacancies in BaZrO3 (001) ultra-thin films

Physical Chemistry Chemical Physics ◽

10.1039/c6cp00830e ◽

2016 ◽

Vol 18 (15) ◽

pp. 9902-9908 ◽

Cited By ~ 9

Author(s):

Marco Arrigoni ◽

Tor S. Bjørheim ◽

Eugene Kotomin ◽

Joachim Maier

Keyword(s):

Thin Films ◽

Electronic Structure ◽

First Principles ◽

Oxygen Vacancies ◽

Confinement Effects ◽

First Principles Study ◽

Atomic And Electronic Structure ◽

Phonon Properties

In this contribution, we study possible confinement effects on the atomic and electronic structure, and phonon properties of neutral and fully charged oxygen vacancies in BaZrO3 (001) ultra-thin films.

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Correlating Electronic Structure of Metal Oxide Nanomaterials to Device Performance Using Synchrotron-Excited X-Ray Spectroscopy

2018 12th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM) ◽

10.1109/asdam.2018.8544465 ◽

2018 ◽

Author(s):

J. A. McLeod

Keyword(s):

Electronic Structure ◽

Metal Oxide ◽

Device Performance ◽

X Ray ◽

Structure Of Metal ◽

Metal Oxide Nanomaterials

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Electronic Structure of Metal-Free Porphyrazines in Thin Films

The Journal of Physical Chemistry B ◽

10.1021/jp030647g ◽

2003 ◽

Vol 107 (42) ◽

pp. 11643-11647 ◽

Cited By ~ 6

Author(s):

D. Pop ◽

B. Winter ◽

W. Freyer ◽

I. V. Hertel ◽

W. Widdra

Keyword(s):

Thin Films ◽

Electronic Structure ◽

Metal Free ◽

Structure Of Metal

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Theoretical Investigation of the Prospect to Tailor ZnO Electronic Properties with VP Thin Films

Nanomaterials ◽

10.3390/nano11061412 ◽

2021 ◽

Vol 11 (6) ◽

pp. 1412

Author(s):

Anastasiia S. Kholtobina ◽

Evgenia A. Kovaleva ◽

Julia Melchakova ◽

Sergey G. Ovchinnikov ◽

Alexander A. Kuzubov

Keyword(s):

Thin Films ◽

Zinc Oxide ◽

Electronic Structure ◽

Quantum Chemistry ◽

Density Distribution ◽

Electronic Properties ◽

Spin Density ◽

Atomic Layer ◽

Oxide Substrate ◽

Atomic And Electronic Structure

The atomic and electronic structure of vanadium phosphide one- to four-atomic-layer thin films and their composites with zinc oxide substrate are modelled by means of quantum chemistry. Favorable vanadium phosphide to ZnO orientation is defined and found to remain the same for all the structures under consideration. The electronic structure of the composites is analyzed in detail. The features of the charge and spin density distribution are discussed.

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