Full-Field Identification of Interfaces in Microelectronic Devices

2016 ◽  
pp. 9-13
Author(s):  
A. P. Ruybalid ◽  
J. P. M. Hoefnagels ◽  
O. van der Sluis ◽  
M. G. D. Geers
Keyword(s):  
Full Field ◽  
Microelectronic Devices ◽  
Field Identification

scholarly journals Comparison of two full-field identification methods for the wedge splitting test on a refractory

2018 ◽  
Vol 38 (16) ◽  
pp. 5569-5579 ◽  
Author(s):  
R. Vargas ◽  
J. Neggers ◽  
R.B. Canto ◽  
J.A. Rodrigues ◽  
F. Hild
Keyword(s):  
Full Field ◽  
Identification Methods ◽  
Wedge Splitting Test ◽  
Splitting Test ◽  
Field Identification ◽  
Wedge Splitting

scholarly journals A stress scale in full-field identification procedures: a diffuse stress gauge

2005 ◽  
Vol 24 (3) ◽  
pp. 442-451 ◽  
Author(s):  
Stéphane Roux ◽  
François Hild ◽  
Stéphane Pagano
Keyword(s):  
Full Field ◽  
Stress Scale ◽  
Field Identification ◽  
Identification Procedures

scholarly journals Improving full-field identification using progressive model enrichments

2017 ◽  
Vol 118-119 ◽  
pp. 213-223 ◽  
Author(s):  
J. Neggers ◽  
F. Mathieu ◽  
F. Hild ◽  
S. Roux ◽  
N. Swiergiel
Keyword(s):  
Full Field ◽  
Field Identification

Full-field identification of mixed-mode adhesion properties in a flexible, multi-layer microelectronic material system

2020 ◽  
Vol 226 ◽  
pp. 106879
Author(s):  
A.P. Ruybalid ◽  
O. van der Sluis ◽  
M.G.D. Geers ◽  
J.P.M. Hoefnagels
Keyword(s):  
Mixed Mode ◽  
Material System ◽  
Adhesion Properties ◽  
Full Field ◽  
Field Identification

Characterization of Sputtered Films using the Scanning Electron Microscope

1973 ◽  
Vol 31 ◽  
pp. 44-45
Author(s):  
R. F. Schneidmiller ◽  
W. F. Thrower ◽  
C. Ang
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Sputtered Films ◽  
Plasma Sputtering ◽  
Microelectronic Devices ◽  
Control Film ◽  
Scanning Electron

Solid state materials in the form of thin films have found increasing structural and electronic applications. Among the multitude of thin film deposition techniques, the radio frequency induced plasma sputtering has gained considerable utilization in recent years through advances in equipment design and process improvement, as well as the discovery of the versatility of the process to control film properties. In our laboratory we have used the scanning electron microscope extensively in the direct and indirect characterization of sputtered films for correlation with their physical and electrical properties.Scanning electron microscopy is a powerful tool for the examination of surfaces of solids and for the failure analysis of structural components and microelectronic devices.

Ion Beam Induced Interfacial Reactions in Molybdenum Thin Films on Silicon

1981 ◽  
Vol 39 ◽  
pp. 162-163
Author(s):  
L. J. Chen ◽  
L. S. Hung ◽  
J. W. Mayer
Keyword(s):  
Ion Beam ◽  
Chemical Vapor ◽  
Interfacial Reactions ◽  
Practical Applications ◽  
Microelectronic Devices ◽  
Recent Emergence ◽  
Chemical Vapor Deposited ◽  
Atomic Mixing ◽  
Silicon Interface ◽  
Kinetics Of

When an energetic ion penetrates through an interface between a thin film (of species A) and a substrate (of species B), ion induced atomic mixing may result in an intermixed region (which contains A and B) near the interface. Most ion beam mixing experiments have been directed toward metal-silicon systems, silicide phases are generally obtained, and they are the same as those formed by thermal treatment.Recent emergence of silicide compound as contact material in silicon microelectronic devices is mainly due to the superiority of the silicide-silicon interface in terms of uniformity and thermal stability. It is of great interest to understand the kinetics of the interfacial reactions to provide insights into the nature of ion beam-solid interactions as well as to explore its practical applications in device technology.About 500 Å thick molybdenum was chemical vapor deposited in hydrogen ambient on (001) n-type silicon wafer with substrate temperature maintained at 650-700°C. Samples were supplied by D. M. Brown of General Electric Research & Development Laboratory, Schenectady, NY.

Current distribution of Nilgiri grass yellow Eurema nilgiriensis Yata (Lepidoptera: Pieridae), with an updated taxonomic key to Eurema of Western Ghats, India

ENTOMON ◽  
2019 ◽  
Vol 44 (1) ◽  
pp. 23-32 ◽  
Author(s):  
P. C. Sujitha ◽  
G. Prasad ◽  
R. Nitin ◽  
Dipendra Nath Basu ◽  
Krushnamegh Kunte ◽  
...  
Keyword(s):  
Current Distribution ◽  
Western Ghats ◽  
Original Description ◽  
High Elevation ◽  
Type Locality ◽  
Ecological Data ◽  
Field Identification ◽  
Wing Patterns ◽  
Southern Western Ghats ◽  
The Nilgiris

Eurema nilgiriensis Yata, 1990, the Nilgiri grass yellow, was described from Nilgiris in southern India. There are not many published records of this species since its original description, and it was presumed to be a high-elevation endemic species restricted to its type locality. Based on the external morphology (wing patterns) as well as the male genitalia, the first confirmed records of the species from Agasthyamalais and Kodagu in the southern Western Ghats, is provided here. This report is a significant range extension for the species outside the Nilgiris, its type locality. Ecological data pertaining to this species as well as the field identification key to all known Eurema of Western Ghats are also presented.

Full-Field Approach for Modeling of Microstructural Evolutions During Forming Processes

2019 ◽  
Author(s):  
S. Andrietti ◽  
M. Bernacki ◽  
N. Bozzolo ◽  
L. Maire ◽  
P. De Micheli ◽  
...  
Keyword(s):  
Full Field ◽  
Field Approach
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