Analysis of Dynamic Linear Memristor Device Models

Author(s):  
Balwinder Raj ◽  
Sundarapandian Vaidyanathan
Keyword(s):  
2012 ◽  
Vol 3 ◽  
pp. 722-730 ◽  
Author(s):  
César Moreno ◽  
Carmen Munuera ◽  
Xavier Obradors ◽  
Carmen Ocal

We report on the use of scanning force microscopy as a versatile tool for the electrical characterization of nanoscale memristors fabricated on ultrathin La0.7Sr0.3MnO3 (LSMO) films. Combining conventional conductive imaging and nanoscale lithography, reversible switching between low-resistive (ON) and high-resistive (OFF) states was locally achieved by applying voltages within the range of a few volts. Retention times of several months were tested for both ON and OFF states. Spectroscopy modes were used to investigate the I–V characteristics of the different resistive states. This permitted the correlation of device rectification (reset) with the voltage employed to induce each particular state. Analytical simulations by using a nonlinear dopant drift within a memristor device explain the experimental I–V bipolar cycles.


2011 ◽  
Vol 32 (10) ◽  
pp. 1436-1438 ◽  
Author(s):  
Chris Yakopcic ◽  
Tarek M. Taha ◽  
Guru Subramanyam ◽  
Robinson E. Pino ◽  
Stanley Rogers

2021 ◽  
pp. 2100515
Author(s):  
Yuqian Gu ◽  
Martha I. Serna ◽  
Sivasakthya Mohan ◽  
Alejandra Londoño‐Calderon ◽  
Taimur Ahmed ◽  
...  

Author(s):  
S. Majzoub ◽  
A.S. Elwakil ◽  
C. Psychalinos ◽  
B.J. Maundy

2019 ◽  
Vol 7 (5) ◽  
pp. 1298-1306 ◽  
Author(s):  
Jianhui Zhao ◽  
Zhenyu Zhou ◽  
Yuanyuan Zhang ◽  
Jingjuan Wang ◽  
Lei Zhang ◽  
...  

An electrochemical metallization memristor based on Zr0.5Hf0.5O2 film and an active Cu electrode with quantum conductance and neuromorphic behavior has been reported in this work.


2020 ◽  
Vol 111 ◽  
pp. 113708 ◽  
Author(s):  
Vishal Gupta ◽  
Giulia Lucarelli ◽  
Sergio Castro-Hermosa ◽  
Thomas Brown ◽  
Marco Ottavi
Keyword(s):  

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