Free Electron Behavior in Semiconductor Heterostructures

2017 ◽  
pp. 57-109
Author(s):  
Thomas P. Pearsall
Keyword(s):  
Free Electron ◽  
Semiconductor Heterostructures

Artifact-free electron microscopic immunocytochemistry on rat brain tissue

1991 ◽  
Vol 49 ◽  
pp. 272-273
Author(s):  
Veronika Burmeister ◽  
N. Ludvig ◽  
P.C. Jobe
Keyword(s):  
Microscopic Examination ◽  
Free Electron ◽  
Electron Microscopic Examination ◽  
Ultrastructural Localization ◽  
Rabbit Serum ◽  
Electron Microscopic ◽  
Electron Microscopic Immunocytochemistry ◽  
Phosphate Buffered Saline ◽  
Rat Brain Tissue ◽  
Immune Rabbit

Electron microscopic immunocytochemistry provides an important tool to determine the ultrastructural distribution of various molecules in both normal and pathologic tissues. However, the specific immunostaining may be obscured by artifactual immunoreaction product, misleading the investigator. Previous observations show that shortening the incubation period with the primary antibody from the generally used 12-24 hours to 1 hour substantially reduces the artifactual immunostaining. We now extend this finding by the demonstration of artifact-free ultrastructural localization of the Ca2/calmodulindependent cyclic nucleotide phosphodiesterase (CaM-dependent PDE) immunoreactivity in brain.Anesthetized rats were perfused transcardially with phosphate-buffered saline followed by a fixative containing paraformaldehyde (4%) and glutaraldehyde (0.25%) in PBS. The brains were removed, and 40μm sections were cut with a vibratome. The sections were processed for immunocytochemistry as described by Ludvig et al. Both non-immune rabbit serum and specific CaM-dependent PDE antibodies were used. In both experiments incubations were at one hour and overnight. The immunostained sections were processed for electron microscopic examination.

Interlayer mixing in GaAs/AlxGa1-xAs heterostructures as a result of Se+ ion implantation

1988 ◽  
Vol 46 ◽  
pp. 908-909
Author(s):  
E.G. Bithell ◽  
W.M. Stobbs
Keyword(s):  
Ion Implantation ◽  
Diffusion Coefficients ◽  
Dark Field ◽  
Atomic Mass ◽  
Composition Profile ◽  
Semiconductor Heterostructures ◽  
Transmission Electron ◽  
Microscope Images ◽  
Damage Process ◽  
Electron Energy Loss

It is well known that the microstructural consequences of the ion implantation of semiconductor heterostructures can be severe: amorphisation of the damaged region is possible, and layer intermixing can result both from the original damage process and from the enhancement of the diffusion coefficients for the constituents of the original composition profile. A very large number of variables are involved (the atomic mass of the target, the mass and energy of the implant species, the flux and the total dose, the substrate temperature etc.) so that experimental data are needed despite the existence of relatively well developed models for the implantation process. A major difficulty is that conventional techniques (e.g. electron energy loss spectroscopy) have inadequate resolution for the quantification of any changes in the composition profile of fine scale multilayers. However we have demonstrated that the measurement of 002 dark field intensities in transmission electron microscope images of GaAs / AlxGa1_xAs heterostructures can allow the measurement of the local Al / Ga ratio.

FAR INFRARED FREE ELECTRON LASER

1983 ◽  
Vol 44 (C1) ◽  
pp. C1-385-C1-385
Author(s):  
E. D. Shaw ◽  
R. M. Emanuelson ◽  
G. A. Herbster
Keyword(s):  
Free Electron ◽  
Free Electron Laser ◽  
Far Infrared

TAPERED WIGGLER FREE ELECTRON LASERS DRIVEN BY NON-MONOENERGETIC ELECTRON BEAMS

1983 ◽  
Vol 44 (C1) ◽  
pp. C1-371-C1-371 ◽  
Author(s):  
J. C. Goldstein ◽  
W. B. Colson ◽  
R. W. Warren
Keyword(s):  
Free Electron ◽  
Electron Beams ◽  
Free Electron Lasers ◽  
Monoenergetic Electron

FULLY QUANTIZED MANY PARTICLE THEORY OF A FREE-ELECTRON LASER

1983 ◽  
Vol 44 (C1) ◽  
pp. C1-367-C1-367
Author(s):  
W. Becker ◽  
J. K. McIver
Keyword(s):  
Free Electron ◽  
Free Electron Laser ◽  
Particle Theory

Radiation of Charge Moving Between Two Planar Periodic Wire Structures

2020 ◽  
Vol 23 (1) ◽  
pp. 66-71
Author(s):  
E. A. Gurnevich ◽  
I. V. Moroz
Keyword(s):  
Angular Distribution ◽  
Charged Particle ◽  
Research And Development ◽  
High Power ◽  
Free Electron ◽  
Radiation Intensity ◽  
Free Electron Lasers ◽  
Radiation Sources ◽  
Power Radiation ◽  
High Power Radiation

The Smith-Purcell radiation of a charged particle moving in a periodic structure is analysed theoretically. The considered structure consists of two planar diffraction gratings with different periods which are formed by parallel conducting wires. The analytical expression for the spectral-angular distribution of radiation is obtained. It is shown that the angular distribution of radiation can be made narrower by using two gratings instead of one, and radiation intensity can be manipulated by parallel relative shift of gratings. The obtained results are of great importance for the research and development of high power radiation sources based on volume free-electron lasers.

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