An ESOP Based Cube Decomposition Technique for Reversible Circuits

2017 ◽  
pp. 127-140
Author(s):  
Sai Phaneendra Parlapalli ◽  
Chetan Vudadha ◽  
M. B. Srinivas
Keyword(s):  
Decomposition Technique ◽  
Reversible Circuits

DOMAIN-DECOMPOSITION TECHNIQUE IN LATTICE BOLTZMANN METHOD

2003 ◽  
Vol 17 (01n02) ◽  
pp. 129-133 ◽  
Author(s):  
ZHAOLI GUO ◽  
CHUGUANG ZHENG ◽  
BAOCHANG SHI
Keyword(s):  
Domain Decomposition ◽  
Lattice Boltzmann Method ◽  
Lattice Boltzmann ◽  
Decomposition Technique ◽  
Irregular Geometries ◽  
2D Flow ◽  
Boltzmann Method

In this paper a domain-decomposition technique is proposed in the framework of the lattice Boltzmann method in order to handle flows in irregular geometries. The 2D flow in a channel with a square or slant branch cavity is simulated based on this technique.

A-Si:H Films Deposited by Dc-Masd Technique at High Substrate Temperature

1996 ◽  
Vol 420 ◽  
Author(s):  
O. A. Golikova ◽  
A. N. Kuznetsov ◽  
V. Kh. Kudojarova ◽  
M. M. Kazanin ◽  
A. Ikosarev
Keyword(s):  
Substrate Temperature ◽  
Hydrogen Content ◽  
High Substrate Temperature ◽  
Decomposition Technique ◽  
High Substrate ◽  
Optimized Conditions

AbstractDc-magnetron assisted silane decomposition technique has been tested for deposition of undoped a-Si:H at substrate temperature Ts=300–400°C. In the optimized conditions device-quality a-Si: H films were deposited independently of Ts. A low hydrogen content CH (up to 2 at.°) and microstructure variations are characteristic of the MASD films.

Sign in / Sign up

Export Citation Format

Share Document