In this paper, the insulated gate bipolar transistor (IGBT) is taken as an example to discuss the interference characteristics of the power electronics devices used in new energy vehicles. Firstly, the on-off processes of the IGBT are analyzed and reconstructed. Then, the high frequency circuit model of IGBT is established, considering both the on-off processes and the effects of the stray parameters. Furthermore, the effects of IGBT on equipment around are investigated based on the calculations of interference voltage transfer gains and common mode (CM) current transfer admittance. Finally, the model and analyses are verified by both the simulations and the experiments.
Thermal modelling of high-frequency magnetic components for power electronics by Finite Element Analysis